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VSB2045Y-M3/54

P1-P3P4-P5
VSB2045Y-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Dec-13
1
Document Number: 89960
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Photovoltaic Solar Cell Protection Schottky Rectifier
Ultra Low V
F
= 0.30 V at I
F
= 5.0 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• High forward surge capability
• ESD capability
• High junction temperature 230 °C maximum at DC
forward current
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: P600
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
Notes
(1)
With heatsink
(2)
Without heatsink, free air
PRIMARY CHARACTERISTICS
I
F(AV)
20 A
V
RRM
45 V
I
FSM
250 A
V
F
at I
F
= 20 A 0.42 V
T
OP
max. (AC mode) 150 °C
T
J
max. (DC forward current) 230 °C
Package P600
Diode variation Single die
P600
TMBS
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSB2045Y UNIT
Device marking code V2045Y
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum average forward rectified current (fig. 1)
I
F(DC)
(1)
20
A
I
F(DC)
(2)
6.5
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
250 A
Operating junction temperature range T
OP
-40 to +150 °C
Storage temperature range T
STG
-40 to +175 °C
Junction temperature in DC forward current
without reverse bias, t 1 h
T
J
(1)
230 °C
VSB2045Y-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Dec-13
2
Document Number: 89960
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: 40 ms pulse width
Notes
(1)
Without heatsink, free air; units mounted on PCB with 2 mm x 2 mm copper pad areas at 9.5 mm lead length
(2)
Leads clipped at 3 mm lead length from plastic body on 7.0 cm x 2.2 cm x 1.9 cm x 2 heatsink
Notes
(1)
Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 25 kV
(2)
System ESD standard
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 5.0 A
T
A
= 25 °C
V
F
(1)
0.44 -
V
I
F
= 10 A 0.46 -
I
F
= 20 A 0.50 0.58
I
F
= 5.0 A
T
A
= 125 °C
0.30 -
I
F
= 10 A 0.35 -
I
F
= 20 A 0.42 0.50
Reverse current V
R
= 45 V
T
A
= 25 °C
I
R
(2)
23.4 1200 μA
T
A
= 125 °C 11.9 35 mA
Typical junction capacitance 4.0 V, 1 MHz C
J
2050 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSB2045Y UNIT
Thermal resistance
R
JA
(1)
55
°C/W
R
JL
(1)
3.5
Typical thermal resistance R
JL
(2)
2.5 °C/W
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(T
A
= 25 °C unless otherwise noted)
STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE
JESD22-A114 Human body model (contact mode) C = 150 pF, R = 1.5
V
C
3B > 8 kV
JESD22-A115 Machine model (contact mode) C = 200 pF, R = 0 C > 400 V
IEC 61000-4-2
(2)
Human body model (air discharge mode)
(1)
C = 150 pF, R = 330 4> 15 kV
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
VSB2045Y-M3/54 1.88 54 800 13" diameter paper tape and reel
VSB2045Y-M3/73 1.88 73 300 Ammo pack packaging
VSB2045Y-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Dec-13
3
Document Number: 89960
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Rated Forward Current vs. Ambient Temperature
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Junction Capacitance
Ambient Temperature (°C)
DC Forward Current (A)
0
0
25 50
75 100 175 200 225 250
4
8
12
16
20
24
125 150
Free Air, without Heatsink
With Heatsink
180
12 16 20
DC Forward Current (A)
Lead Temperature (°C)
230
220
210
200
190
14 18
R
thJL
= 2.5 °C/W
R
thJL
= 3.5 °C/W
Innite Heatsink
Minimum Pad Area on PCB, airow
010152025303540455
180
170
160
150
230
220
210
200
190
Reverse Voltage (V)
Junction Temperature (°C)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.7
100
10
1
0.1
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
0.6
Instantaneous Forward Current (A)
0.1 0.3 0.5
20 40 60 80 100
1000
100
10
1
100 000
10 000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
100
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
P1-P3P4-P5

VSB2045Y-M3/54

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Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 20A 45V .3V@5A TrenchMOS
Lifecycle:
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