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DMN4468LSS-13

P1-P3P4-P6
DMN4468LSS
Document number: DS31773 Rev. 5 - 2
1 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN4468LSS
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
30V
14mΩ @ V
GS
= 10V
10A
20mΩ @ V
GS
= 4.5V
8A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state
resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN4468LSS-13 SO-8 2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
SO-8
Top View
Internal Schematic
D
S
G
DS
D
D
D
S
S
G
Equivalent circuit
Chengdu A/T Site Shanghai A/T Site
= Manufacturer’s Marking
N4468LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 4
8 5
N4468LS
WW
YY
1 4
8 5
N4468LS
WW
YY
DMN4468LSS
Document number: DS31773 Rev. 5 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN4468LSS
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Note 5)
Steady
State
T
A = +25°C
T
A = +70°C
I
D
10
9
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 50 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
1.52 W
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
82 °C/W
Thermal Resistance, Junction to Case (Note 6)
R
Jc
8.2 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1.0 μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
1.05 — 1.95 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
11
15
14
20
mΩ
V
GS
= 10V, I
D
= 11.6A
V
GS
= 4.5V, I
D
= 10A
Forward Transfer Admittance
|Y
fs
|
— 8 — S
V
DS
= 5V, I
D
= 11.6A
Diode Forward Voltage
V
SD
— 0.73 0.95 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 867 — pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 85 — pF
Reverse Transfer Capacitance
C
rss
— 81 — pF
Gate Resistance
R
g
— 1.39 — Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
— 18.85 — nC
V
GS
= 10V, V
DS
= 15V,
I
D
=11.6A
Gate-Source Charge
Q
g
s
— 2.59 — nC
Gate-Drain Charge
Q
g
d
— 6.15 — nC
Turn-On Delay Time
t
D
(
on
)
— 5.46 — ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.3Ω, R
G
= 3Ω, I
D
= 1A
Turn-On Rise Time
t
r
— 14.53 — ns
Turn-Off Delay Time
t
D
(
off
)
— 18.84 — ns
Turn-Off Fall Time
t
f
— 6.01 — ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN4468LSS
Document number: DS31773 Rev. 5 - 2
3 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN4468LSS
NEW PRODUCT
0
5
10
15
20
25
30
012 3 45
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 2.2V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8.0V
GS
V = 2.8V
GS
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0
0.01
0.02
0.03
0.04
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
GS
0
0.01
0.02
0.03
0.04
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DSON
V = 4.5V
I = 10A
GS
D
V = 10V
I = 11.6A
GS
D
0
0.01
0.02
0.03
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
V = 10V
I = 11.6A
GS
D
V = 4.5V
I = 10A
GS
D
P1-P3P4-P6

DMN4468LSS-13

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Manufacturer:
Diodes Incorporated
Description:
MOSFET N-CHAN ENHNCMNT MODE
Lifecycle:
New from this manufacturer.
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