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VSMF4710-GS08

P1-P3P4-P6
VSMF4710
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 25-Sep-13
1
Document Number: 81470
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
DESCRIPTION
VSMF4710 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a PLCC-2 package for surface
mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λ
p
= 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: f
c
= 24 MHz
• Good spectral matching with Si photodetectors
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
948553
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) ϕ (deg) λ
p
(nm) t
r
(ns)
VSMF4710 10 ± 60 870 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMF4710-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2
VSMF4710-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2
VSMF4710
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 25-Sep-13
2
Document Number: 81470
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
160 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +85 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature Acc. figure 8, J-STD-020 T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, soldered on PCB R
thJA
250 K/W
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21343
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21344
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.5 1.8 V
I
F
= 1 A, t
p
= 100 μs V
F
2.3 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
-1.8 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
125 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
61022mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
100 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
40 mW
Temperature coefficient of φ
e
I
F
= 100 mA TKφ
e
-0.35 %/K
Angle of half intensity ϕ ± 60 deg
Peak wavelength I
F
= 100 mA λ
p
870 nm
Spectral bandwidth I
F
= 100 mA Δλ 40 nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
0.25 nm/K
Rise time I
F
= 100 mA t
r
15 ns
Fall time I
F
= 100 mA t
f
15 ns
Cut-off frequency I
DC
= 70 mA, I
AC
= 30 mA pp f
c
24 MHz
Virtual source diameter d 0.44 mm
VSMF4710
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 25-Sep-13
3
Document Number: 81470
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Power vs. Wavelength
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
0.01 0.1 1 10
1
10
100
1000
10 000
t
p
- Pulse Length (ms)
100
95 9985
I
F
- Forward Current (mA)
DC
t
p
/T = 0.005
0.5
0.2
0.1
0.01
0.05
0.02
T
amb
< 60 °C
18873_1
I
F
- Forward Current (mA)
1000
100
10
1
V
F
- Forward Voltage (V)
02413
t
p
= 100 µs
t
p
/T = 0.001
0.1
1
10
100
110
100 1000
18874
I
F
- Forward Pulse Current (mA)
I
e
- Radiant Intensity (mW/sr)
t
p
= 1 µs
820 870
0
0.25
0.5
0.75
1.0
1.25
920
15821
I
F
= 100 mA
Φ
e rel
- Relative Radiant Power
- Wavelength (nm)
λ
0.4 0.2 0
I
e, rel
- Relative Radiant Sensitivity
94 8013
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
P1-P3P4-P6

VSMF4710-GS08

Mfr. #:
Buy VSMF4710-GS08
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters 60 Degree 170mW
Lifecycle:
New from this manufacturer.
Delivery:
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