VS-ST333C..C Series
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Revision: 20-Feb-17
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Document Number: 93678
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Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Fig. 17 - Gate Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
20 joules per p ulse
2
1
0.5
0.3
0.2
10
5
Peak On-state Current (A)
3
ST33 3C ..C Se ries
Sinusoidal pulse
tp
1E4
1E1 1E2 1E3 1E4
Pulse Basew idth (µs)
20 joules per pulse
2
1
0.5
0.3
0.2
10
3
ST3 33 C S e ries
Rec ta n g u la r p ulse
di/dt = 50A/µs
0.4
t p
5
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IG D
(b)
(a)
Tj=25 °C
Tj=12 5 °C
Tj=- 40 °C
(1)
(2)
Instanta ne ous G ate C urr ent (A )
Instantan eous G ate Vo ltage (V )
Rectangular gate pulse
a ) R e c o m m en d e d lo a d lin e fo r
b ) Re c o m m e n d e d lo a d lin e f o r
<=30% rated di/dt : 10V, 10ohms
rated di/dt : 20V , 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 1 0W , tp = 20 m s
(2) PGM = 2 0W , tp = 10 m s
(3) PGM = 4 0W , tp = 5m s
(4) PGM = 6 0W, tp = 3.3ms
(3 )
Device: ST333C ..C Series Frequen cy Limite d by PG(AV )
(4)
