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VSSA310SHM3_A/I

P1-P3P4-P4
VSSA310S-M3, VSSA310SHM3
www.vishay.com
Vishay General Semiconductor
Revision: 20-Jan-17
1
Document Number: 89405
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANCIAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1)
Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
100 V
I
FSM
60 A
V
F
at I
F
= 3.0 A 0.62 V
T
J
max. 150 °C
Package DO-214AC (SMA)
Diode variation Single die
DO-214AC (SMA)
TMBS
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSA310S UNIT
Device marking code V3B
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum DC forward current
I
F
(1)
3.0
A
I
F
(2)
1.7
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
60 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
VSSA310S-M3, VSSA310SHM3
www.vishay.com
Vishay General Semiconductor
Revision: 20-Jan-17
2
Document Number: 89405
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Notes
(1)
Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R
JA
- junction to ambient
(2)
Units mounted on P.C.B. with 10 mm x 10 mm copper pad areas; R
JM
- junction to mount
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
R
= 1.0 mA T
A
= 25 °C V
BR
100 (minimum) - V
Instantaneous forward voltage I
F
= 3.0 A
T
A
= 25 °C
V
F
(1)
0.71 0.80
V
T
A
= 125 °C 0.62 0.70
Reverse current
V
R
= 70 V
T
A
= 25 °C
I
R
(2)
1.0 - μA
T
A
= 125 °C 0.95 - mA
V
R
= 100 V
T
A
= 25 °C 3.5 150 μA
T
A
= 125 °C 2.2 15 mA
Typical junction capacitance 4.0 V, 1 MHz C
J
175 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSA310S UNIT
Typical thermal resistance
R
JA
(1)
135
°C/W
R
JM
(2)
25
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
VSSA310S-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel
VSSA310S-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
VSSA310SHM3_A/H
(1)
0.064 H 1800 7" diameter plastic tape and reel
VSSA310SHM3_A/I
(1)
0.064 I 7500 13" diameter plastic tape and reel
0
25
50
75
100
125
3.5
150
T
M
- Mount Temperature (°C)
Average Forward Rectified Current (A)
2.5
2.0
1.5
0.5
0
1.0
T
M
Measured at Terminal
3.0
0
3.6
0
2.6
Average Forward Current (A)
Average Power Loss (W)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
D = t
p
/T t
p
T
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
2.2
2.0
1.8
1.6
2.4
VSSA310S-M3, VSSA310SHM3
www.vishay.com
Vishay General Semiconductor
Revision: 20-Jan-17
3
Document Number: 89405
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
0
0.1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 150 °C
10
20
40
60
0.0001
0.001
0.01
0.1
1
10
80
100
Percent of Rated Peak Reverse Voltage (%)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 150 °C
30
50
70
90
Instantaneous Reverse Current (mA)
100
10
10
100
1000
0.1
1
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
100
10
1
100
1000
0.01
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
10
0.1
Junction to Ambient
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
P1-P3P4-P4

VSSA310SHM3_A/I

Mfr. #:
Buy VSSA310SHM3_A/I
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 3A, 100V, SMA AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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