2003 Jul 15 3
NXP Semiconductors Product data sheet
Ultra low V
F
MEGA Schottky barrier
rectifier
PMEG1020EV
ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Notes
1. Pulse test: t
p
= 300 μs; δ = 0.02.
2. For Schottky barrier rectifiers thermal runaway has to be considered, as in some applications the reverse power
losses
(P
R
) are a significant part of the total power losses.
THERMAL CHARACTERISTICS
Notes
1. Refer to SOT666 standard mounting conditions.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for cathode 1 cm
2
.
3. Solder point of cathode tabs.
Soldering
Reflow soldering is the only recommended soldering method.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
forward voltage see Fig.2; note 1
I
F
= 0.01 A 100 130 mV
I
F
= 0.1 A 164 200 mV
I
F
= 1 A 255 350 mV
I
F
= 2 A 306 460 mV
I
R
reverse current see Fig.3 note 2
V
R
= 5 V 0.7 2 mA
V
R
= 8 V 1 2.5 mA
V
R
= 10 V 1.2 3 mA
C
d
diode capacitance V
R
= 5 V; f = 1 MHz; see Fig.4 37 45 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 405 K/W
note 2 215 K/W
R
th j-s
thermal resistance from junction to solder point note 3 80 K/W
