2N5582

TECHNICAL DATA

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/423

Devices Qualified Level

2N5581 2N5582

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings Symbol Value Unit

Collector-Emitter Voltage

V

CEO

50 Vdc

Collector-Base Voltage

V

CBO

75 Vdc

Emitter-Base Voltage

V

EBO

6.0 Vdc

Collector Current

I

C

800 mAdc

Total Power Dissipation @ T

A

= 25

0

C

(1)

@ T

C

= 25

0

C

(2)

P

T

0.5

2.0

W

W

Operating & Storage Junction Temperature Range

T

op

,

T

stg

-55 to +200

0

C

1) Derate linearly 2.86 mW/

0

C for T

A

> 25

0

C

2) Derate linearly 11.43 mW/

0

C for T

C

> 25

0

C

TO-46*

(TO-206AB)

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)

Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I

C

= 10 mAdc

V

(BR)

CEO

50 Vdc

Collector-Base Cutoff Current

V

CB

= 60 Vdc

V

CB

= 75 Vdc

I

CBO

10

10

ηAdc

µAdc

Emitter-Base Cutoff Current

V

EB

= 4.0Vdc

V

EB

= 6.0Vdc

I

EBO

10

10

ηAdc

µAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

2N5581, 2N5582 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics Symbol Min. Max. Unit

ON CHARACTERISTICS

(3)

Forward-Current Transfer Ratio

I

C

= 0.1 mAdc, V

CE

= 10 Vdc 2N5581

I

C

=1.0 m Adc, V

CE

= 10 Vdc

I

C

= 10 mAdc, V

CE

= 10 Vdc

I

C

= 150 mAdc, V

CE

= 10 Vdc

I

C

= 500 mAdc, V

CE

= 10 Vdc

I

C

= 0.1 mAdc, V

CE

= 10 Vdc 2N5582

I

C

=1.0 m Adc, V

CE

= 10 Vdc

I

C

= 10 mAdc, V

CE

= 10 Vdc

I

C

= 150 mAdc, V

CE

= 10 Vdc

I

C

= 500 mAdc, V

CE

= 10 Vdc

h

FE

h

FE

30

35

40

40

20

50

75

100

100

30

120

300

Collector-Emitter Saturation Voltage

I

C

= 150 mAdc, I

B

= 15 mAdc

I

C

= 500 mAdc, I

B

= 50 mAdc

V

CE(sat)

0.3

1.0

Vdc

Base-Emitter Voltage

I

C

= 150 mAdc, I

B

= 15 mAdc

I

C

= 500 mAdc, I

B

= 50 mAdc

V

BE(sat)

0.6

1.2

2.0

Vdc

DYNAMIC CHARACTERISTICS

Forward Current Transfer Ratio

I

C

= 1.0 mAdc, V

CE

= 10 Vdc 2N5581

2N5582

h

fe

30

50

Forward Current Transfer Ratio

I

C

= 50 mAdc, V

CE

= 20 Vdc, f = 100 MHz

h

fe



2.5

Output Capacitance

V

CB

= 10 Vdc, I

E

= 0, 100 kHz ≤ f ≤ 1.0 MHz

C

obo

8.0 pF

Input Capacitance

V

EB

= 0.5 Vdc, I

C

= 0, 100 kHz ≤ f ≤ 1.0 MHz

C

ibo

25 pF

SWITCHING CHARACTERISTICS

Turn-On Time

V

CC

= 30 Vdc; I

C

= 150 mAdc; I

B1

= 15 mAdc

t

on

35

ηs

Turn-Off Time

V

CC

= 30 Vdc; I

C

= 150 mAdc; I

B1

= I

B2

= 15 mAdc

t

off

300

ηs

(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

2N5582

Mfr. #:

Manufacturer:

Microchip / Microsemi

Description:

Bipolar Transistors - BJT Small-Signal BJT

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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