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NCV7708DWR2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NCV7708
http://onsemi.com
4
MAXIMUM RATINGS
Rating Value Unit
Power Supply Voltage (VS1, VS2)
(DC)
(AC), t < 500 ms, Ivsx > −2 A
−0.3 to 40
−1.0
V
Output Pin OUTHx
(DC)
(AC – inductive clamping)
−0.3 to 40
−8.0
V
Output Pin OUTLx
(DC)
(AC), t < 500 ms, IOUTLx > −2 A
External Clamp Voltage (Note 3)
−0.3 to 34
−1.0
48
V
Pin Voltage (Logic Input pins, SI, SCLK, CSB, SO, EN, V
CC
) −0.3 to 7.0 V
Output Current (OUTL1, OUTL2, OUTL3, OUTL4, OUTL5, OUTL6, OUTH1, OUTH2, OUTH3, OUTH4,
OUTH5, OUTH6)
(DC) Vds = 12 V
(DC) Vds = 20 V
(DC) Vds = 40 V
(AC) Vds = 12 V, (50 ms pulse, 1 s period)
(AC) Vds = 20 V, (50 ms pulse, 1 s period)
(AC) Vds = 40 V, (50 ms pulse, 1 s period)
−1.5 to 1.5
−0.7 to 0.7
−0.25 to 0.25
−2.0 to 2.0
−0.9 to 0.9
−0.3 to 0.3
A
Electrostatic Discharge, Human Body Model, VS1, VS2, OUTx 4.0 kV
Electrostatic Discharge, Human Body Model, all other pins 2.0 kV
Electrostatic Discharge, Machine Model 200 V
Operating Junction Temperature −40 to 150 °C
Storage Temperature Range −55 to 150 °C
Moisture Sensitivity Level
MAX 235°C Processing
3 −
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Thermal Parameters
Test Conditions
Typical Value
SOIC 28−pin Package
min−pad board
(Note 1)
1″−pad board
(Note 2)
Junction−to−Lead (psi−JL8, Y
JL8
) or Pins 6−9, 20−23
10 11 °C/W
Junction−to−Ambient (R
q
JA
, q
JA
)
73 56 °C/W
1. 1−oz copper, 240 mm
2
copper area, 0.062″ thick FR4.
2. 1−oz copper, 986 mm
2
copper area, 0.062″ thick FR4.
3. OUTLx must be protected against flyback voltages that exceed 48 V.
NCV7708
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS
(−40°C < T
J
< 150°C, 5.5 V < VSx < 40 V, 3 V < V
CC
< 5.25 V, EN = V
CC
, unless otherwise specified)
Characteristic Test Conditions Min Typ Max Unit
GENERAL
Supply Current (VS1 + VS2)
Sleep Mode
VS1 = VS2 = 13.2 V, V
CC
= CSB = 5 V,
EN = SI = SCLK = 0 V
− 1.0 5.0
mA
Supply Current (VS1)
Active Mode
EN = V
CC
, 5.5 V < VSx < 35 V
No Load
− 2.0 4.0 mA
Supply Current (VS2)
Active Mode
EN = V
CC
, 5.5 V < VSx < 35 V
No Load
− 0.5 1.0 mA
Supply Current (V
CC
) − Sleep Mode (Note 5)
Supply Current (V
CC
) − Active Mode
CSB = V
CC
, EN = SI = SCLK = 0 V
(−40°C to 85°C)
EN = CSB = V
CC
, SI = SCLK = 0 V
−
−
1.0
1.5
2.5
3.0
mA
mA
V
CC
Power−On−Reset Threshold 2.60 2.80 3.00 V
VSx Undervoltage Detection Threshold VSx decreasing 4.2 4.6 5.1 V
VSx Undervoltage Detection Hysteresis 100 − 400 mV
VSx Overvoltage Detection Threshold VSx increasing 35.0 37.5 40.0 V
VSx Overvoltage Detection Hysteresis 1.5 3.5 5.5 V
Thermal Warning (Note 4) 120 145 170 °C
Thermal Warning Hysteresis (Note 4) − 30 − °C
Thermal Shutdown (Note 4) 155 175 195 °C
Ratio of Thermal Shutdown to Thermal Warning (Note 4) 1.05 1.20 − −
OUTPUTS
Output High R
DSon
(source) I
out
= −500 mA
8 V < Vs < 40 V
8 V < Vs < 40 V, T = 25°C
5.5 V < Vs ≤ 8 V
5.5 V < Vs ≤ 8 V, T = 25°C
−
−
−
−
−
0.8
−
2.0
2.0
1.3
4.0
−
W
Output Low R
DSon
(sink) I
out
= 500 mA
8 V < Vs < 40 V
8 V < Vs < 40 V, T = 25°C
5.5 V < Vs ≤ 8 V
5.5 V < Vs ≤ 8 V, T = 25°C
−
−
−
−
−
0.8
−
2.0
2.0
1.2
4.0
−
W
Source Leakage Current OUTH(1−6) = 0 V, VSx = 40 V, V
CC
= 5 V
OUTH(1−6) = 0 V, T = 25°C, V
CC
= 5 V
−5.0
−1.0
−
−
−
−
mA
Sink Leakage Current OUTL(1−6) = 34 V, V
CC
= 5 V
OUTL(1−6) = 34 V, V
CC
= 5 V, T = 25°C
−
−
−
−
5.0
1.0
mA
Overcurrent Shutdown Threshold (OUTHx) V
CC
= 5 V, Vsx = 13.2 V −1.9 −1.45 −1.0 A
Current Limit (OUTHx) V
CC
= 5 V, Vsx = 13.2 V −5.0 −3.0 −2.0 A
Overcurrent Shutdown Threshold (OUTLx) V
CC
= 5 V, Vsx = 13.2 V 1.0 1.45 1.9 A
Overcurrent Shutdown Delay Time − Source
Overcurrent Shutdown Delay Time − Sink
V
CC
= 5 V, Vsx = 13.2 V 10
10
25
25
50
50
ms
4. Thermal characteristics are not subject to production test.
5. Production tested @ −40°C, 125°C. Refer to graph 6 for V
CC
sleep current vs. temperature.
6. Refer to “Typical High−Side Negative Clamp Voltage Chart,” Figure 5
7. Not production tested.
NCV7708
http://onsemi.com
6
ELECTRICAL CHARACTERISTICS
(−40°C < T
J
< 150°C, 5.5 V < VSx < 40 V, 3 V < V
CC
< 5.25 V, EN = V
CC
, unless otherwise specified)
Characteristic UnitMaxTypMinTest Conditions
OUTPUTS
Current Limit (OUTLx) V
CC
= 5 V, Vsx = 13.2 V 2.0 3.0 5.0 A
Under Load Detection Threshold (OUTLx) V
CC
= 5 V, Vsx = 13.2 V 3.0 8.0 15 mA
Under Load Detection Threshold (OUTHx) V
CC
= 5 V, Vsx = 13.2 V −15 −6.0 −2.0 mA
Under Load Detection Delay Time V
CC
= 5 V, Vsx = 13.2 V 200 350 600
ms
High−Side Clamping Voltage I(OUTHx) = −50 mA (Note 6) −0.7 V
Power Transistor Body Diode Forward Voltage If = 500 mA 0.9 1.3 V
Logic Inputs (EN, SI, SCLK, CSB)
Input Threshold − High
Input Threshold − Low
−
30
−
−
70
−
%V
CC
Input Hysteresis 100 300 600 mV
Input Pulldown Current (EN, SI, SCLK)
Sleep Mode (SI, SCLK)
EN = SI = SCLK = V
CC
EN = 0, SI = SCLK = V
CC
5.0
10
10
50
50
100
mA
Input Pullup Current (CSB)
Sleep Mode
CSB = 0 V, EN = V
CC
EN = 0 V, V
CC
= 5 V
−50
−100
−10
−50
−5.0
−10
mA
Input Capacitance (Note 7) − 10 15 pF
Logic Output (SO)
Output High I
out
= 1 mA V
CC
– 1.0 V
CC
– 0.7 − V
Output Low I
out
= −1.6 mA − 0.2 0.4 V
Tri−state Leakage CSB = V
CC
, 0 V < SO < V
CC
−10 − 10
mA
Tri−state Input Capacitance (Note 7) CSB = V
CC
, 0 V < V
CC
< 5.25 V − 10 15 pF
Timing Specifications
High Side Turn On Time
Vs = 13.2 V, R
load
= 25 W
− 7.5 13
ms
High Side Turn Off Time
Vs = 13.2 V, R
load
= 25 W
− 3.0 6.0
ms
Low Side Turn On Time
Vs = 13.2 V, R
load
= 25 W
− 6.5 13
ms
Low Side Turn Off Time
Vs = 13.2 V, R
load
= 25 W
− 2.0 5.0
ms
High Side Rise Time
Vs = 13.2 V, R
load
= 25 W
− 4.0 8.0
ms
High Side Fall Time
Vs = 13.2 V, R
load
= 25 W
− 2.0 3.0
ms
Low Side Rise Time
Vs = 13.2 V, R
load
= 25 W
− 1.0 2.0
ms
Low Side Fall Time
Vs = 13.2 V, R
load
= 25 W
− 1.0 3.0
ms
Non−Overlap Time High Side Turn Off
To Low Side Turn On
1.5 − −
ms
Non−Overlap Time Low Side Turn Off
To High Side Turn On
2.5 − −
ms
4. Thermal characteristics are not subject to production test.
5. Production tested @ −40°C, 125°C. Refer to graph 6 for V
CC
sleep current vs. temperature.
6. Refer to “Typical High−Side Negative Clamp Voltage Chart,” Figure 5
7. Not production tested.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

NCV7708DWR2

Mfr. #:
Buy NCV7708DWR2
Manufacturer:
ON Semiconductor
Description:
IC DRIVER DOUBLE HEX 28-SOIC
Lifecycle:
New from this manufacturer.
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