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DHH55-36N1F

P1-P3P4-P5
DHH55-36N1F
b4
2x e
E
W
A
A2
A1
c
2x b2
3x b
E1
D1
D2
L1
L
D
R
Q
1 53
D3
D
i
e
kon
v
e
x
e
F
o
r
m
des
S
ubs
t
r
a
t
es
i
s
t t
y
p
.
<
0
.
05
mm
übe
r
der Kunststoffoberflächeder Bauteilunterseite
The convexbowof substrate is typ. < 0.05 mm over plastic
surface level ofdevice bottom side
min max min max
A 4.83 5.21 0.190 0.205
A1 2.59 3.00 0.102 0.118
A2 1.17 2.16 0.046 0.085
b 1.14 1.40 0.045 0.055
b2 1.47 1.73 0.058 0.068
b4 2.54 2.79 0.100 0.110
c 0.51 0.74 0.020 0.029
D 20.80 21.34 0.819 0.840
D1 14.99 15.75 0.590 0.620
D2 1.65 2.03 0.065 0.080
D3 20.30 20.70 0.799 0.815
E 19.56 20.29 0.770 0.799
E1 16.76 17.53 0.660 0.690
e 7.62 BSC 0.300 BSC
L 19.81 21.34 0.780 0.840
L1 2.11 2.59 0.083 0.102
Q 5.33 6.20 0.210 0.244
R
2.54
4.57 0.100 0.180
W
-
0.10
-
0.004
Di
m.
Millimeter Inches
1 2 5
Outlines i4-Pac
IXYS reserves the right to change limits, conditions and dimensions.
20160916dData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
DHH55-36N1F
0 400 800 1200 1600
0
200
400
600
800
1000
1200
1400
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
0 200 400 600 800 1000
0
30
60
90
120
150
0.0
0.5
1.0
1.5
2.0
2.5
0 400 800 1200 1600
0
20
40
60
80
100
100 1000
0
10
20
30
40
0 1 2 3
0
20
40
60
80
100
120
1
4
0
V
FR
t
fr
I
RM
Q
r
I
F
[A]
V
F
[V]
Q
r
[nC]
-di
F
/dt [A/µs]
I
RM
[A]
-di
F
/dt [A/µs]
K
f
T
VJ
[°C]
t
rr
[ns]
-di
F
/dt [A/µs]
di
F
/dt [A/µs]
V
FR
[V]
t [s]
Z
thJC
[K/W]
Fig. 1 Typ. rward current
I
F
versus V
F
Fig. 2 Typ. reverse recovery charge
Q
r
versus -di
F
/dt
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
& typ. forward recovery
time t
fr
versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
t
fr
[µs]
Constants for Z
thJC
calculation:
i R
thi
(K/W) t
i
(s)
1 0.212 0.0055
2 0.248 0.0092
3 0.063 0.0007
4 0.077 0.0391
T
VJ
= 100°C
V
R
= 1200 V
I
F
= 60 A
T
VJ
= 100°C
V
R
= 1200 V
I
F
= 60 A
T
VJ
= 100°C
V
R
= 1200 V
I
F
= 60 A
T
VJ
= 100°C
V
R
= 1200 V
T
VJ
= 125°C
T
VJ
= 25°C
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions.
20160916dData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
P1-P3P4-P5

DHH55-36N1F

Mfr. #:
Buy DHH55-36N1F
Manufacturer:
Littelfuse
Description:
Diodes - General Purpose, Power, Switching 55 Amps 3600V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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