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Document Number 81692
Rev. 1.3, 22-Sep-08
VESD12A1C-02Z
Vishay Semiconductors
For technical support, please contact: ESD-Protection@vishay.com
BiAs-Mode (Bidirectional Asymmetrical protection mode)
With the VESD12A1C-02Z one signal- or data-lines (L1) can be protected against voltage transients. With
pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as
the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse
Working Voltage (V
RWM
) the protection diode between data line and ground offers a high isolation to the ground
line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V
C
) is defined by the BReakthrough Voltage (V
BR
) level
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (V
F
) clamps the negative transient close to
the ground level.
Due to the different clamping levels in forward and reverse direction the VESD12A1C-02Z clamping behaviour
is Bi
directional and Asymmetrical (BiAs).
Electrical Characteristics
Ratings at 25 °C, ambient temperature, unless otherwise specified
VESD12A1C-02Z
BiAs mode (between pin 1 and pin 2)
L1
20280
1
2
Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit
Protection paths number of lines which can be protected
N
lines
1 lines
Reverse stand-off voltage
at I
R
= 0.1 µA V
RWM
12 V
Reverse current
at V
R
= 12 V I
R
0.01 0.1 µA
Reverse break down voltage
at I
R
= 1 mA V
BR
13.5 14 16 V
Reverse clamping voltage
at I
PP
= 1 A V
C
15.8 17 V
at I
PP
= I
PPM
= 4 A V
C
20 23 V
Forward clamping voltage
at I
PP
= 0.2 A V
F
0.9 1.2 V
at I
PP
= 1 A V
F
1.1 1.5 V
at I
PP
= I
PPM
= 4 A V
F
1.7 2.1 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
30 36 pF
at V
R
= 6 V; f = 1 MHz C
D
12.5 pF
