SI1970DH-T1-GE3

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Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
Vishay Siliconix
Si1970DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Forward Diode Voltage
Threshold Voltage
V
SD
- S o urce-to-Drain Voltage (V)
-
) A
(
t
n e
r
r
u
C
e
c
r u
o S
I
S
0.1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
1.0
T
J
= 150 °C
)V(V
)ht(SG
T
J
- Temperature (°C)
0.5
0.7
0.9
1.1
1.3
.5
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
On-Resistance vs. Gate-Source Voltage
Single Pulse Power
V
GS
- Gate-to-Source Voltage (V)
R
)no(SD
(Ω) ecnatsiseR-nO -
0.0
0.2
0.4
0.6
0
.
8
012345
I
D
= 1.4 A
T
A
= 125 °C
T
A
= 25 °C
0
1
5
)W( r e w o P
Time (s)
3
4
1 600 10 0.1 0.01
2
100
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
0.1 1 10 100
)A( tner
ru
C
ni
a
rD-I
D
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
T
A
= 25 °C
Single Pulse
BVDSS Limited
DC
1 s, 10 s
100 ms
Limited by R
*
DS(on)
10 ms
1 ms
100 µs
Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
www.vishay.com
5
Vishay Siliconix
Si1970DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
I
D
)A( tnerruC niarD -
T
C
- Case Temperature (°C)
0.0
0.4
0.8
1.2
1.6
2
.
0
0 25 50 75 100 125 150
Package Limited
Power Derating
C
- Case Temperature (°C)
T
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
.
4
25 50 75 100 125 150
)W( noitapissiD rewoP
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Document Number: 74343
S10-0721-Rev. B, 29-Mar-10
Vishay Siliconix
Si1970DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74343
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
110 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t
n e
i
s n a
r T
e
v i t
c e
f
f
E
d e
z i
l a m
r o
N
e
c
n a
d
e p m I
l a m
r
e
h T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 170 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e f f E d e z i l a m r o N
e c n a d e p m I l a m r e h T
0.02

SI1970DH-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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