NCP5106A, NCP5106B
www.onsemi.com
19
PACKAGE DIMENSIONS
DFN10 4x4, 0.8P
CASE 506DJ
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM THE
TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS
WELL AS THE TERMINALS.
5. FOR DEVICE OPN CONTAINING W OPTION, DETAIL A
ALTERNATE CONSTRUCTION A−2 AND DETAIL B AL-
TERNATE CONSTRUCTION B−2 ARE NOT APPLICABLE.
A
D
E
B
C0.10
PIN ONE
REFERENCE
TOP VIEW
SIDE VIEW
BOTTOM VIEW
A
D2
E2
C
C0.10
C0.10
C0.08
A1
SEATING
PLANE
e
NOTE 3
b
10X
0.10 C
0.05 C
A
BB
DIM MIN MAX
MILLIMETERS
A 0.80 1.00
A1 0.00 0.05
b 0.25 0.35
D 4.00 BSC
D2 2.90 3.10
E 4.00 BSC
E2 1.85 2.05
e 0.80 BSC
E3
L 0.35 0.45
1
6
K
A3 0.20 REF
MOUNTING FOOTPRINT
NOTE 4
A3
DETAIL B
DETAIL A
L1
DETAIL A
L
ALTERNATE TERMINAL
CONSTRUCTIONS
L
L1 0.00 0.15
DETAIL B
MOLD CMPDEXPOSED Cu
ALTERNATE
CONSTRUCTIONS
A1
A3
4.30
0.80
0.60
10X
DIMENSIONS: MILLIMETERS
0.42
3.20
PITCH
2.15
10X
1
PACKAGE
OUTLINE
RECOMMENDED
10X
L
10
5
0.375 BSC
10X
2X
2X
K 0.90 −−
ALTERNATE A−1 ALTERNATE A−2
ALTERNATE B−1 ALTERNATE B−2
0.10 C ABB
0.10 C ABB
E3
0.75
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NCP5106BPG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Gate Drivers HIGH VOLT MOSFET DR LO MOSFET IGBT DRVR
Lifecycle:
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