BC489A Datasheet BC489, BC489BZL1G, BC489A | P1-P3

January, 2006 − Rev. 2

1 Publication Order Number:

BC489/D

BC489, A, B

High Current Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

80 Vdc

Collector−Base Voltage V

CBO

80 Vdc

Collector−Emitter Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

C

0.5 Adc

Total Power Dissipation @ T

A

= 25°C

Derate above T

A

= 25°C

P

D

625

5.0

mW

mW/°C

Total Power Dissipation @ T

A

= 25°C

Derate above T

A

= 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

83.3 °C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

BC489x = Device Code

x = A or B

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

MARKING DIAGRAM

TO−92

CASE 29

STYLE 17

1

2

3

(Note: Microdot may be in either location)

http://onsemi.com

BC

489x

AYWW G

G

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

COLLECTOR

1

2

BASE

3

EMITTER

BC489, A, B

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(I

C

= 10 mAdc, I

B

= 0)

V

(BR)CEO

80 − −

Vdc

Collector−Base Breakdown Voltage

(I

C

= 100 mAdc, I

E

= 0)

V

(BR)CBO

80 − −

Vdc

Emitter−Base Breakdown Voltage

(I

E

= 10 mAdc, I

C

= 0)

V

(BR)EBO

5.0 − − Vdc

Collector Cutoff Current

(V

CB

= 60 V, I

E

= 0)

I

CBO

− − 100

nAdc

ON CHARACTERISTICS

DC Current Gain

(I

C

= 10 mAdc, V

CE

= 2.0 Vdc)

(I

C

= 100 mAdc, V

CE

= 2.0 Vdc) BC489

BC489A

BC489B

(I

C

= 1.0 Adc, V

CE

= 5.0 Vdc)

h

FE

40

60

100

160

15

−

160

260

−

400

250

400

−

Collector−Emitter Saturation Voltage

(I

C

= 500 mAdc, I

B

= 50 mAdc)

(I

C

= 1.0 Adc, I

B

= 100 mAdc)

V

CE(sat)

−

0.2

0.3

0.5

−

Vdc

Collector−Emitter Saturation Voltage

(I

C

= 500 mAdc, I

B

= 50 mAdc)

(I

C

= 1.0 Adc, I

B

= 100 mAdc) (Note 1)

V

BE(sat)

−

0.85

0.9

1.2

−

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= 50 mAdc, V

CE

= 2.0 Vdc, f = 100 MHz)

f

T

− 200 − MHz

Output Capacitance

(V

CB

= 10 Vdc, I

E

= 0, f = 1.0 MHz)

C

ob

− 7.0 − pF

Input Capacitance

(V

EB

= 0.5 Vdc, I

C

= 0, f = 1.0 MHz)

C

ib

− 50 − pF

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.

Figure 1. Switching Time Test Circuits

*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities

5.0 ms

+10 V

0

V

in

5.0 mF

100

TURN−ON TIME

−1.0 V

V

CC

+40 V

R

L

OUTPUT

*C

S

< 6.0 pF

t

r

= 3.0 ns

5.0 ms

V

in

5.0 mF

100

TURN−OFF TIME

+V

BB

V

CC

+40 V

R

L

OUTPUT

*C

S

< 6.0 pF

t

r

= 3.0 ns

R

B

R

B

BC489, A, B

http://onsemi.com

3

Figure 2. Current−Gain — Bandwidth Product

I

C

, COLLECTOR CURRENT (mA)

20070503020107.05.03.02.0

300

200

100

70

50

30

V

CE

= 2.0 V

T

J

= 25°C

f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

T

C, CAPACITANCE (pF)

t, TIME (ns)

Figure 3. Capacitance

V

R

, REVERSE VOLTAGE (VOLTS)

1005020105.02.01.00.50.20.1

80

60

40

20

10

4.0

T

J

= 25°C

C

obo

C

ibo

8.0

Figure 4. Switching Time

I

C

, COLLECTOR CURRENT (mA)

500503020107.05.0

1.0 k

V

CC

= 40 V

I

C

/I

B

= 10

I

B1

= I

B2

T

J

= 25°C

700

500

300

200

100

70

50

30

20

10

t

s

t

f

t

r

t

d

@ V

BE(off)

= 0.5 V

100

6.0

20010070 300

Figure 5. Thermal Response

t, TIME (ms)

1.0

r(t) TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k

50k

100k

D = 0.5

0.2

0.1

0.02

0.01

SINGLE PULSE

DUTY CYCLE, D = t

1

/t

2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

1

(SEE AN−469)

T

J(pk)

− T

C

= P

(pk)

Z

q

JC(t)

T

J(pk)

− T

A

= P

(pk)

Z

q

JA(t)

t

1

t

2

P

(pk)

Z

q

JC(t)

= r(t) • R

q

JC

Z

q

JA(t)

= r(t) • R

q

JA

SINGLE PULSE

BC489A

BC489A

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