Functional description L5973AD
10/22 Doc ID 9552 Rev 9
Figure 6. Current limitation circuitry
4.5 Error amplifier
The voltage error amplifier is the core of the loop regulation. It is a transconductance
operational amplifier whose non inverting input is connected to the internal voltage
reference (1.235 V), while the inverting input (FB) is connected to the external divider or
directly to the output voltage. The output (COMP) is connected to the external compensation
network.
The uncompensated error amplifier has the following characteristics:
The error amplifier output is compared with the oscillator sawtooth to perform PWM control.
DRIVER
NOT
A1
PWM
VCC
OUT
A1/A2=95
I
L
RSENSE
D00IN1134
I
OFF
II
RTH
A2
Table 5. Uncompensated error amplifier
Transconductance 2300 μS
Low frequency gain 65 dB
Minimum sink/source voltage 1500 μA/300 μA
Output voltage swing 0.4 V/3.65 V
Input bias current 2.5 μA
L5973AD Functional description
Doc ID 9552 Rev 9 11/22
4.6 PWM comparator and power stage
This block compares the oscillator sawtooth and the error amplifier output signals
generating the PWM signal for the driving stage. The power stage is a very critical block
cause it has to guarantee a correct turn on and turn OFF of the PDMOS. The turn ON of the
power element, or better, the rise time of the current at turn on, is a very critical parameter to
compromise.
At a first approach, it looks like the faster it is the rise time, the lower are the turn on losses.
But there is a limit introduced by the recovery time of the recirculation diode. In fact when the
current of the power element equals the inductor current, the diode turns off and the drain of
the power is free to go high. But during its recovery time, the diode can be considered as an
high value capacitor and this produces a very high peak current, responsible of many
problems:
Spikes on the device supply voltage that cause oscillations (and thus noise) due to the
board parasitic.
Turn ON overcurrent causing a decrease of the efficiency and system reliability.
Big EMI problems.
Shorter freewheeling diode life.
The fall time of the current during the turn off is also critical. In fact it produces voltage
spikes (due to the parasites elements of the board) that increase the voltage drop across the
PDMOS.
In order to minimize all these problems, a new topology of driving circuit has been used and
its block diagram is shown in Figure 7.
The basic idea is to change the current levels used to turn on and off the power switch,
according with the PDMOS status and with the gate clamp status.
This circuitry allow to turn off and on quickly the power switch and to manage the above
question related to the freewheeling diode recovery time problem.
The gate clamp is necessary to avoid that Vgs of the internal switch goes higher than
Vgsmax. The ON/OFF Control block avoids any cross conduction between the supply line
and ground.
Functional description L5973AD
12/22 Doc ID 9552 Rev 9
Figure 7. Driving circuitry
4.7 Inhibit function
The inhibit feature allows to put in stand-by mode the device. With INH pin higher than 2.2 V
the device is disabled and the power consumption is reduced to less than 100 μA. With INH
pin lower than 0.8 V, the device is enabled. If the INH pin is left floating, an internal pull up
ensures that the voltage at the pin reaches the inhibit threshold and the device is disabled.
The pin is also Vcc compatible.
4.8 Thermal shutdown
The shutdown block generates a signal that turns off the power stage if the temperature of
the chip goes higher than a fixed internal threshold (150 °C). The sensing element of the
chip is very close to the PDMOS area, so ensuring an accurate and fast temperature
detection. An hysteresis of approximately 20 °C avoids that the devices turns on and off
continuously
Vgs
max
GATE
STOP
DRIVE
DRAIN
OFF
ON
PDMOS
VOUT
DRAIN
VCC
I
LOAD
C
ESR
D00IN1133
I
OFF
I
ON
ON/OFF
CONTROL
CLAMP
L

L5973ADTR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Switching Voltage Regulators 1.235 to 35V Step-Dn
Lifecycle:
New from this manufacturer.
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