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SL04-E3-08

P1-P3P4-P6
SL04
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 28-Mar-18
1
Document Number: 85942
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier Surface Mount
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SMF (DO-219AB)
Polarity: color band denotes cathode end
Weight: approx. 15 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 50K/box
08/3K per 7" reel (8 mm tape), 30K/box
Circuit configuration: single
FEATURES
• For surface mounted applications
• Low-profile package
• Ideal for automated placement
• Low power loss, high efficiency
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Wave and reflow solderable
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, and commercial grade
• Base P/N-HE3 - RoHS-compliant, and AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC
converters, and polarity protection in commercial, industrial,
and automotive applications.
Note
(1)
Mounted on epoxy substrate with 3 mm x 3 mm Cu pads ( 40 μm thick)
1
2
23020
eSMP
®
Series
SMF (DO-219AB)
23019
click logo to get started
Available
Models
Available
PARTS TABLE
PART ORDERING CODE MARKING REMARKS
SL04
SL04-E3-18 or SL04-E3-08
SL04-HE3-18 or SL04-HE3-08
S4 Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Maximum repetitive peak reverse voltage V
RRM
40 V
Maximum average forward rectified current (fig. 4) I
F(AV)
1.1 A
Peak forward surge current 8.3 ms single half sine-wave
T
J(init)
= 25 °C
I
FSM
40 A
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to lead R
thJL
22 K/W
Thermal resistance junction to ambient air
(1)
R
thJA
180 K/W
Junction temperature in DC forward current without reverse bias T
j
175 °C
Storage temperature range T
stg
-55 to +175 °C
SL04
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 28-Mar-18
2
Document Number: 85942
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typical Forward Characteristics
Fig. 2 - Typical Diode Capacitance vs. Reverse Voltage
Fig. 3 - Typical Reverse Characteristics
Fig. 4 - Forward Current Derating Curve
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 0.5 A
T
J
= 25 °C
V
F
(1)
0.41 0.47
V
I
F
= 1.1 A 0.48 0.54
I
F
= 0.5 A
T
J
= 100 °C
0.34 -
I
F
= 1.1 A 0.43 -
I
F
= 0.5 A
T
J
= 125 °C
0.31 -
I
F
= 1.1 A 0.42 -
Reverse current V
R
= 40 V
T
J
= 25 °C
I
R
10 20 μA
T
J
= 100 °C 1.2 2.6 mA
T
J
= 125 °C 4.5 13 mA
Typical junction capacitance V
R
= 4.0 V, 1 MHz C
D
65 - pF
0.001
0.01
0.1
1
10
0.00 0.20 0.40 0.60 0.80 1.00 1.20
I
F
[A]
V
F
[V]
typical at 25 °C
typical at 100 °C
typical at 125 °C
typical at 150 °C
0
20
40
60
80
100
120
140
160
180
200
0.1 1 10 100
C
D
[pF]
V
R
[V]
f = 1 MHz
100.0E-9
1.0E-6
10.0E-6
100.0E-6
1.0E-3
10.0E-3
100.0E-3
1.0E+0
010203040
I
R
[A]
V
R
[V]
T
J
at 25 °C T
J
at 75 °C
T
J
at 100 °C T
J
at 125 °C
T
J
at 150 °C T
J
at 175 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 25 50 75 100 125 150 175
Average Forward Current [A]
Lead Temperature (°C)
R
thJL
= 22K/W
R
thJA
= 180K/W
SL04
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 28-Mar-18
3
Document Number: 85942
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Transient Thermal Impedance
PACKAGE DIMENSIONS in millimeters (inches): SMF (DO-219AB)
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Transient Thermal Impedance [K/W]
t
-
Pulse Duration [s]
R
thJL
R
thJA
(Pad 3 mm x 3 mm)
Foot print recommendation:
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051) 1.3 (0.051)
2.9 (0.114)
1.4 (0.055)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.85 (0.033)
0.35 (0.014)
1.2 (0.047)
0.8 (0.031)
1.9 (0.075)
1.7 (0.067)
1.08 (0.043)
0.88 (0.035)
0.25 (0.010)
0.05 (0.002)
0.1 (0.004)
0 (0.000)
5
5
Created - Date: 15. February 2005
17247
Detail Z
enlarged
P1-P3P4-P6

SL04-E3-08

Mfr. #:
Buy SL04-E3-08
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 40V Vrrm If(AV)1.1A 40A Ifsm eSMP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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