SI9433BDY-T1-GE3

Vishay Siliconix
Si9433BDY
Document Number: 72755
S09-0870-Rev. B, 18-May-09
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 20
0.040 at V
GS
= - 4.5 V
- 6.2
0.060 at V
GS
= - 2.7 V
- 5.0
SD
SD
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si9433BDY-T1-E3 (Lead (Pb)-free)
Si9433BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
Notes:
a. Surface Mounted on FR4 board, t 10 s.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 6.2 - 4.5
A
T
A
= 70 °C
- 5.0 - 3.5
Pulsed Drain Current
I
DM
- 20
Continuous Source Current (Diode Conduction)
a
I
S
- 2.3 - 1.2
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.5 1.3
W
T
A
= 70 °C
1.6 0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 10 s
R
thJA
45 50
°C/W
Steady State 80 95
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
20 24
www.vishay.com
2
Document Number: 72755
S09-0870-Rev. B, 18-May-09
Vishay Siliconix
Si9433BDY
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.
a
Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.6 - 1.5 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
- 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 70 °C
- 10
On-State Drain Current
b
I
D(on)
V
DS
- 5 V, V
GS
= - 4.5 V
- 20
A
V
DS
- 5 V, V
GS
= - 2.7 V
- 5
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 6.2 A
0.030 0.040
Ω
V
GS
= - 2.7 V, I
D
= - 5.0 A
0.050 0.060
Forward Transconductance
b
g
fs
V
DS
= - 9 V, I
D
= - 6.2 A
15 S
Diode Forward Voltage
b
V
SD
I
S
= - 2.6 A, V
GS
= 0 V
- 0.76 - 1.1 V
Dynamic
a
Total Gate Charge
Q
g
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 6.2 A
8.8 14
nCGate-Source Charge
Q
gs
1.8
Gate-Drain Charge
Q
gd
2.4
Gate Resistance
R
g
8.5 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 6 V, R
L
= 6 Ω
I
D
- 1 A, V
GEN
= - 4.5 V, R
g
= 6 Ω
40 60
ns
Rise Time
t
r
55 85
Turn-Off Delay Time
t
d(off)
65 100
Fall Time
t
f
30 45
Source-Drain Reverse Recovery Time
t
rr
I
F
= - 2.3 A, dI/dt = 100 A/µs
35 55
Output Characteristics
0
4
8
12
16
20
012345
V
GS
= 5 V thru 3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
2 V
2.5 V
Transfer Characteristics
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 72755
S09-0870-Rev. B, 18-May-09
www.vishay.com
3
Vishay Siliconix
Si9433BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (R
DS(on)
Ω)
0.00
0.03
0.06
0.09
0.12
0.15
048121620
I
D
- Drain Current (A)
V
GS
= 2.7 V
V
GS
= 4.5 V
0
1
2
3
4
5
6
024681012
V
DS
= 6 V
I
D
= 6.2 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
10
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
300
600
900
1200
1500
048121620
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 6.2 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.00
0.03
0.06
0.09
0.12
0.15
0246810
I
D
= 6.2 A
- On-Resistance (R
DS(on)
Ω)
V
GS
- Gate-to-Source Voltage (V)

SI9433BDY-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V 6.2A 2.5W 40mohm @ 4.5V
Lifecycle:
New from this manufacturer.
Delivery:
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