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Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
Vishay Siliconix
DG411L, DG412L, DG413L
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
(Single Supply 3 V)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, V- = 0 V
V
L
= 3 V, V
IN
= 0.4 V
f
Temp.
b
Typ.
c
A Suffix Limits
- 55 °C to 125 °C
D Suffix Limits
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 0303V
Drain-Source
On-Resistance
R
DS(on)
V+ = 2.7 V, V- = 0 V
I
S
= 5 mA, V
D
= 0.5, 2.2 V
Room
Full
65 80
115
80
100
Switch Off
Leakage Current
g
I
S(off)
V+ = 3.3 , V- = 0 V
V
D
= 1, 2 V, V
S
= 2, 1 V
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
nA
I
D(off)
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
Channel On
Leakage Current
g
I
D(on)
V+ = 3.3 V, V- = 0 V
V
S
= V
D
= 1, 2 V
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
Digital Control
Input Current, V
IN
Low I
IL
V
IN
under test = 0.4 V Full 0.005 - 1.5 1.5 - 1 1
µA
Input Current, V
IN
High I
IH
V
IN
under test = 2.4 V Full 0.005 - 1.5 1.5 - 1 1
Dynamic Characteristics
Tur n -O n T i m e t
ON
R
L
= 300 , C
L
= 35 pF
V
S
= 1.5 V, see figure 2
Room
Full
50 85
150
85
110
ns
Turn-Off Time t
OFF
Room
Full
30 60
100
60
85
Break-Before-Make Time
Delay
t
D
DG413L only, V
S
= 1.5 V
R
L
= 300 , C
L
= 35 pF
Room 6
Charge Injection
e
QV
g
= 0 V, R
g
= 0 , C
L
= 10 nF Room 1 pC
Off Isolation
e
OIRR
R
L
= 50 , C
L
= 5 pF , f = 1 MHz
Room 68
dB
Channel-to-Channel
Crosstalk
e
X
TA LK
Room 85
Source Off Capacitance
e
C
S(off)
f = 1 MHz
Room 6
pFDrain Off Capacitance
e
C
D(off)
Room 6
Channel On Capacitance
e
C
D(on)
Room 20
