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KSC839CYTA

P1-P3P4-P4
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSC839
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 35 V
V
CEO
Collector-Emitter Voltage 30 V
V
EBO
Emitter-Base Voltage 4 V
I
C
Collector Current 100 mA
P
C
Collector Dissipation 250 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=100µA, I
E
=0 35 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=5mA, I
B
=0 30 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=10µA, I
C
=0 4 V
I
CBO
Collector Cut-off Current V
CB
=30V, I
E
=0 0.1 µA
I
EBO
Emitter Cut-off Current V
EB
=4V, I
C
=0 0.1 µA
h
FE
DC Current Gain V
CE
=12V, I
C
=2mA 40 400
V
BE
(on) Base-Emitter On Voltage V
CE
=6V, I
C
=1mA 0.65 0.70 0.75 V
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA 0.1 0.4 V
f
T
Current Gain Bandwidth Product V
CE
=10V, I
C
=1mA 80 200 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 2.0 3.5 pF
Classification R O Y G
h
FE
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400
KSC839
FM/AM RADIO RF AMP, CONV, OSC, IF AMP
• Current Gain Bandwidth Product : f
T
=200MHz
1. Emitter 2. Base 3. Collector
TO-92
1
©2000 Fairchild Semiconductor International
KSC839
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Current Gain Bandwidth Product
012345678910
0
1
2
3
4
5
6
7
8
9
10
I
B
= 90
µ
A
I
B
= 80
µ
A
I
B
= 10
µ
A
I
B
= 20
µ
A
I
B
= 70
µ
A
I
B
= 60
µ
A
I
B
= 50
µ
A
I
B
= 40
µ
A
I
B
= 30
µ
A
Ic[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
110
10
100
1000
V
CE
=12V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1
10
V
CE(sat)
V
BE(sat)
I
C
=10I
B
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
110100
1
10
f = 1MHz
I
E
=0
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
110
10
100
1000
V
CE
=10V
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT
0.46
±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27
±0.20
]
1.27TYP
[1.27
±0.20
]
3.60
±0.20
14.47
±0.40
1.02
±0.10
(0.25)
4.58
±0.20
4.58
+0.25
–0.15
0.38
+0.10
–0.05
0.38
+0.10
–0.05
TO-92
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSC839
Dimensions in Millimeters
P1-P3P4-P4

KSC839CYTA

Mfr. #:
Buy KSC839CYTA
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT NPN Epitaxial Transistor
Lifecycle:
New from this manufacturer.
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