IRF1104PBF

P1-P3 P4-P6 P7-P9

IRF1104PbF

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

0

1000

2000

3000

4000

5000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

C

C

=

=

=

=

0V,

C

C

C

f = 1MHz

+ C

+ C

C SHORTED

GS

iss gs gd , ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0.1

1

10

100

1000

0.2 0.8 1.4 2.0 2.6

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

V = 0 V

GS

T = 25 C

J

°

T = 175 C

J

°

1

10

100

1000

10000

1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T

T

= 175 C

= 25 C

°

°

J

C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

10us

100us

1ms

10ms

0 25 50 75 100

0

5

10

15

20

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

60A

V = 20V

DS

V = 32V

DS

IRF1104PbF

www.irf.com 5

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10V

+

-

V

DD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150 175

0

20

40

60

80

100

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

IRF1104PbF

6 www.irf.com

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

25 50 75 100 125 150 175

0

200

400

600

800

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

I

D

TOP

BOTTOM

24A

42A

60A

P1-P3 P4-P6 P7-P9

IRF1104PBF

Mfr. #:

Manufacturer:

Infineon / IR

Description:

MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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Products related to this Datasheet

IRF1104PBF