LTC3787
13
3787fc
OPERATION
In forced continuous operation or when clocked by an
external clock source to use the phase-locked loop (see
the Frequency Selection and Phase-Locked Loop section),
the inductor current is allowed to reverse at light loads or
under large transient conditions. The peak inductor cur-
rent is determined by the voltage on the ITH pin, just as
in normal operation. In this mode, the efficiency at light
loads is lower than in Burst Mode operation. However,
continuous operation has the advantages of lower output
voltage ripple and less interference to audio circuitry, as
it maintains constant-frequency operation independent
of load current.
When the PLLIN/MODE pin is connected for pulse-skipping
mode, the LTC3787 operates in PWM pulse-skipping mode
at light loads. In this mode, constant-frequency operation
is maintained down to approximately 1% of designed
maximum output current. At very light loads, the current
comparator ICMP may remain tripped for several cycles
and force the external bottom MOSFET to stay off for
the same number of cycles (i.e., skipping pulses). The
inductor current is not allowed to reverse (discontinuous
operation). This mode, like forced continuous operation,
exhibits low output ripple as well as low audio noise and
reduced RF interference as compared to Burst Mode
operation. It provides higher low current efficiency than
forced continuous mode, but not nearly as high as Burst
Mode operation.
Frequency Selection and Phase-Locked Loop
(FREQ and PLLIN/MODE Pins)
The selection of switching frequency is a trade-off between
efficiency and component size. Low frequency opera-
tion increases efficiency by reducing MOSFET switching
losses, but requires larger inductance and/or capacitance
to maintain low output ripple voltage.
The switching frequency of the LTC3787’s controllers can
be selected using the FREQ pin.
If the PLLIN/MODE pin is not being driven by an external
clock source, the FREQ pin can be tied to SGND, tied to
INTV
CC
, or programmed through an external resistor. Tying
FREQ to SGND selects 350kHz while tying FREQ to INTV
CC
selects 535kHz. Placing a resistor between FREQ and SGND
allows the frequency to be programmed between 50kHz
and 900kHz, as shown in Figure 6.
A phase-locked loop (PLL) is available on the LTC3787
to synchronize the internal oscillator to an external clock
source that is connected to the PLLIN/MODE pin. The
LTC3787’s phase detector adjusts the voltage (through
an internal lowpass filter) of the VCO input to align the
turn-on of the first controllers external bottom MOSFET
to the rising edge of the synchronizing signal. Thus, the
turn-on of the second controllers external bottom MOSFET
is 180 or 240 degrees out-of-phase to the rising edge of
the external clock source.
The VCO input voltage is prebiased to the operating fre-
quency set by the FREQ pin before the external clock is
applied. If prebiased near the external clock frequency,
the PLL loop only needs to make slight changes to the
VCO input in order to synchronize the rising edge of the
external clock’s to the rising edge of BG1. The ability to
prebias the loop filter allows the PLL to lock-in rapidly
without deviating far from the desired frequency.
The typical capture range of the LTC3787’s PLL is from
approximately 55kHz to 1MHz, and is guaranteed to lock
to an external clock source whose frequency is between
75kHz and 850kHz.
The typical input clock thresholds on the PLLIN/MODE
pin are 1.6V (rising) and 1.2V (falling).
PolyPhase Applications (CLKOUT and PHASMD Pins)
The LTC3787 features two pins, CLKOUT and PHASMD,
that allow other controller ICs to be daisychained with
the LTC3787 in PolyPhase applications. The clock output
signal on the CLKOUT pin can be used to synchronize
additional power stages in a multiphase power supply
solution feeding a single, high current output or multiple
separate outputs. The PHASMD pin is used to adjust the
phase of the CLKOUT signal as well as the relative phases
between the two internal controllers, as summarized in
Table 1. The phases are calculated relative to the zero
degrees phase being defined as the rising edge of the
bottom gate driver output of controller 1 (BG1). Depend-
ing on the phase selection, a PolyPhase application with
LTC3787
14
3787fc
OPERATION
multiple LTC3787s can be configured for 2-, 3-, 4- , 6- and
12-phase operation.
Table 1.
V
PHASMD
CONTROLLER 2 PHASE (°C) CLKOUT PHASE (°C)
GND 180 60
Floating 180 90
INTV
CC
240 120
CLKOUT is disabled when the controller is in shutdown
or in sleep mode.
Operation When V
IN
> Regulated V
OUT
When V
IN
rises above the regulated V
OUT
voltage, the boost
controller can behave differently depending on the mode,
inductor current and V
IN
voltage. In forced continuous
mode, the loop works to keep the top MOSFET on con-
tinuously once V
IN
rises above V
OUT
. The internal charge
pump delivers current to the boost capacitor to maintain
a sufficiently high TG voltage. The amount of current the
charge pump can deliver is characterized by two curves
in the Typical Performance Characteristics section.
In pulse-skipping mode, if V
IN
is between 100% and
110% of the regulated V
OUT
voltage, TG turns on if the
inductor current rises above a certain threshold and turns
off if the inductor current falls below this threshold. This
threshold current is set to approximately 6%, 4% or
3% of the maximum ILIM current when the ILIM pin is
grounded, floating or tied to INTV
CC
, respectively. If the
controller is programmed to Burst Mode operation under
this same V
IN
window, then TG remains off regardless of
the inductor current.
If V
IN
rises above 110% of the regulated V
OUT
voltage in
any mode, the controller turns on TG regardless of the
inductor current. In Burst Mode operation, however, the
internal charge pump turns off if the chip is asleep. With
the charge pump off, there would be nothing to prevent
the boost capacitor from discharging, resulting in an
insufficient TG voltage needed to keep the top MOSFET
completely on. To prevent excessive power dissipation
across the body diode of the top MOSFET in this situation,
the chip can be switched over to forced continuous mode
to enable the charge pump or a Schottky diode can also
be placed in parallel to the top MOSFET.
Power Good
The PGOOD pin is connected to an open drain of an
internal N-channel MOSFET. The MOSFET turns on and
pulls the PGOOD pin low when the VFB pin voltage is not
within ±10% of the 1.2V reference voltage. The PGOOD
pin is also pulled low when the corresponding RUN pin
is low (shut down). When the VFB pin voltage is within
the ±10% requirement, the MOSFET is turned off and the
pin is allowed to be pulled up by an external resistor to a
source of up to 6V (abs max).
Operation at Low SENSE Pin Common Mode Voltage
The current comparator in the LTC3787 is powered directly
from the SENSE
+
pin. This enables the common mode
voltage of the SENSE
+
and SENSE
pins to operate at as
low as 2.5V, which is below the UVLO threshold. The figure
on the first page shows a typical application in which the
controllers VBIAS is powered from V
OUT
while the V
IN
supply can go as low as 2.5V. If the voltage on SENSE
+
drops below 2.5V, the SS pin will be held low. When the
SENSE voltage returns to the normal operating range, the
SS pin will be released, initiating a new soft-start cycle.
BOOST Supply Refresh and Internal Charge Pump
Each top MOSFET driver is biased from the floating
bootstrap capacitor, C
B
, which normally recharges during
each cycle through an external diode when the bottom
MOSFET turns on. There are two considerations for keep-
ing the BOOST supply at the required bias level. During
start-up, if the bottom MOSFET is not turned on within
100s after UVLO goes low, the bottom MOSFET will be
forced to turn on for ~400ns. This forced refresh gener-
ates enough BOOST-SW voltage to allow the top MOSFET
ready to be fully enhanced instead of waiting for the initial
few cycles to charge up. There is also an internal charge
pump that keeps the required bias on BOOST. The charge
pump always operates in both forced continuous mode
and pulse-skipping mode. In Burst Mode operation, the
charge pump is turned off during sleep and enabled when
the chip wakes up. The internal charge pump can normally
supply a charging current of 55A.
LTC3787
15
3787fc
The Typical Application on the first page is a basic LTC3787
application circuit. LTC3787 can be configured to use either
inductor DCR (DC resistance) sensing or a discrete sense
resistor (R
SENSE
) for current sensing. The choice between
the two current sensing schemes is largely a design trade-
off between cost, power consumption and accuracy. DCR
sensing is becoming popular because it does not require
current sensing resistors and is more power-efficient,
especially in high current applications. However, current
sensing resistors provide the most accurate current limits
for the controller. Other external component selection is
driven by the load requirement, and begins with the se-
lection of R
SENSE
(if R
SENSE
is used) and inductor value.
Next, the power MOSFETs are selected. Finally, input and
output capacitors are selected. Note that the two control-
ler channels of the LTC3787 should be designed with the
same components.
SENSE
+
and SENSE
Pins
The SENSE
+
and SENSE
pins are the inputs to the cur-
rent comparators. The common mode input voltage range
of the current comparators is 2.5V to 38V. The current
sense resistor is normally placed at the input of the boost
controller in series with the inductor.
APPLICATIONS INFORMATION
The SENSE
+
pin also provides power to the current com-
parator. It draws ~200A during normal operation. There
is a small base current of less than 1A that flows into
the SENSE
pin. The high impedance SENSE
input to the
current comparators allows accurate DCR sensing.
Filter components mutual to the sense lines should be
placed close to the LTC3787, and the sense lines should
run close together to a Kelvin connection underneath the
current sense element (shown in Figure 1). Sensing cur-
rent elsewhere can effectively add parasitic inductance
and capacitance to the current sense element, degrading
the information at the sense terminals and making the
programmed current limit unpredictable. If DCR sensing
is used (Figure 2b), sense resistor R1 should be placed
close to the switching node, to prevent noise from coupling
into sensitive small-signal nodes.
Figure 1. Sense Lines Placement with
Inductor or Sense Resistor
(2a) Using a Resistor to Sense Current (2b) Using the Inductor DCR to Sense Current
Figure 2. Two Different Methods of Sensing Current
V
IN
TO SENSE FILTER,
NEXT TO THE CONTROLLER
INDUCTOR OR R
SENSE
3787 F01
TG
SW
BG
LTC3787
INTV
CC
BOOST
SENSE
+
SENSE
(OPTIONAL)
VBIAS
V
IN
V
OUT
SGND
3787 F02a
TG
SW
BG
INDUCTOR
DCR
L
LTC3787
INTV
CC
BOOST
SENSE
+
SENSE
R2C1
R1
VBIAS
V
IN
V
OUT
PLACE C1 NEAR SENSE
PINS
SGND
3787 F02b
(R1
||
R2) • C1 =
L
DCR
R
SENSE(EQ)
= DCR •
R2
R1 + R2

LTC3787IGN#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators PolyPhSync Boost Cntr
Lifecycle:
New from this manufacturer.
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