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BSC025N03MSGATMA1

P1-P3P4-P6P7-P9P10-P10
BSC025N03MS G
1 Power dissipation 2 Drain current
P
tot
=f(T
C
) I
D
=f(T
C
)
parameter: V
GS
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
DS
); T
C
=25 °C; D =0 Z
thJC
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
2
10
1
10
0
10
-1
10
3
10
2
10
1
10
0
10
-1
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
0.01
0.1
1
10
0 0 0 0 0 0 1
t
p
[s]
Z
thJC
[K/W]
0
20
40
60
80
100
0 40 80 120 160
T
C
[°C]
P
tot
[W]
10 V
4.5 V
0
20
40
60
80
100
120
0 40 80 120 160
T
C
[°C]
I
D
[A]
Rev. 1.15 page 4 2009-10-22
BSC025N03MS G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 °C
parameter: T
j
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
6 V
10 V
0
2
4
6
0 10 20 30 40 50
I
D
[A]
R
DS(on)
[m
Ω
Ω
Ω
Ω
]
25 °C
150 °C
0
40
80
120
160
200
0 1 2 3 4 5
V
GS
[V]
I
D
[A]
2.8 V
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
0
50
100
150
200
250
300
0 1 2 3
V
DS
[V]
I
D
[A]
0
40
80
120
160
200
240
0 40 80 120 160
I
D
[A]
g
fs
[S]
Rev. 1.15 page 5 2009-10-22
BSC025N03MS G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=30 A; V
GS
=10 V V
GS(th)
=f(T
j
); V
GS
=V
DS
; I
D
=250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
DS
); V
GS
=0 V; f=1 MHz I
F
=f(V
SD
)
parameter: T
j
typ
98 %
0
1
2
3
4
5
-60 -20 20 60 100 140 180
T
j
[°C]
R
DS(on)
[m
Ω
Ω
Ω
Ω
]
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
T
j
[°C]
V
GS(th)
[V]
Ciss
Coss
Crss
10
4
10
3
10
2
10
1
10
100
1000
10000
0 5 10 15 20 25 30
V
DS
[V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
1
10
100
1000
0.0 0.5 1.0 1.5 2.0
V
SD
[V]
I
F
[A]
Rev. 1.15 page 6 2009-10-22
P1-P3P4-P6P7-P9P10-P10

BSC025N03MSGATMA1

Mfr. #:
Buy BSC025N03MSGATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M
Lifecycle:
New from this manufacturer.
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