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BAT54XV2T5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2017
February, 2017 − Rev. 11
1 Publication Order Number:
BAT54XV2T1/D
BAT54XV2
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mA
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage V
R
30 V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Forward Current (DC) I
F
200 Max mA
Non−Repetitive Peak Forward
Current, t
p
< 10 msec
I
FSM
600 mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
I
FRM
300 mA
Thermal Resistance,
Junction−to−Ambient
R
JA
635 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to 125 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Minimum Pad.
30 VOLT
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
1
CATHODE
2
ANODE
www.onsemi.com
SOD−523
CASE 502
1
2
1
Device Package Shipping
†
ORDERING INFORMATION
MARKING DIAGRAM
BAT54XV2T1G SOD−523
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
JV = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
JVM G
G
BAT54XV2T5G SOD−523
(Pb−Free)
8000 / Tape &
Reel
SBAT54XV2T1G SOD−523
(Pb−Free)
3000 / Tape &
Reel
BAT54XV2
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 A)
V
(BR)R
30 − − V
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
− 7.6 10 pF
Reverse Leakage
(V
R
= 25 V)
I
R
− 0.3 2.0
A
Forward Voltage
(I
F
= 0.1 mA)
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 30 mA)
(I
F
= 100 mA)
V
F
−
−
−
−
−
0.22
0.28
0.35
0.39
0.46
0.24
0.32
0.40
0.50
0.80
V
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R(REC)
= 1.0 mA) Figure 1
t
rr
− − 5.0 ns
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2 k
820
0.1 F
DUT
V
R
100 H
0.1 F
50 Output
Pulse
Generator
50 Input
Sampling
Oscilloscope
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAT54XV2
www.onsemi.com
3
100
0.0 0.1
V
F
, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4
0.5
10
1.0
0.1
85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
5101520
25
14
0
V
R
, REVERSE VOLTAGE (VOLTS)
12
4
2
0
51015 30
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Total Capacitance
−40°C
25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.6
−55°C
150°C
125°C
100
1000
30
2520
6
8
10
I
R
, REVERSE CURRENT (A)
I
F
, FORWARD CURRENT (mA)
C
T
, TOTAL CAPACITANCE (pF)
0.001
t
P
, PULSE ON TIME (ms)
10
5
0
0.01 0.1 1 1000
Figure 5. Forward Surge Current
10010
15
20
25
I
FSM
, FORWARD SURGE MAX CURRENT (A)
Based on square wave currents
T
J
= 25°C prior to surge
P1-P3P4-P4

BAT54XV2T5G

Mfr. #:
Buy BAT54XV2T5G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers SCHOTTKY DIODE 30V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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