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LTC4225CGN-1#TRPBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24
LTC4225-1/LTC4225-2
4
422512f
elecTrical characTerisTics
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
IN
= 12V, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
I
HGATE(UP)
External N-Channel Gate Pull-Up Current Gate Drive On, HGATE = 0V
l
–7 –10 –13 µA
I
HGATE(DN)
External N-Channel Gate Pull-Down
Current
Gate Drive Off, OUT = 12V,
HGATE = OUT + 5V
l
150 300 500 µA
I
HGATE(FPD)
External N-Channel Gate Fast
Pull-Down Current
Fast Turn-Off, OUT = 12V,
HGATE = OUT + 5V
l
100 200 300 mA
t
PHL(SENSE)
Sense Voltage (INn – SENSEn)
High to HGATEn Low
∆V
SENSE
= 300mV, C
HGATE
= 10nF
l
0.5 1 µs
t
OFF(HGATE)
ENn High to HGATEn Low
ONn Low to HGATEn Low
INn Low to HGATEn Low
l
l
l
20
10
10
40
20
20
µs
µs
µs
t
D(HGATE)
ONn High, ENn Low to HGATEn
Turn-On Delay
l
50 100 150 ms
t
P(HGATE)
ONn to HGATEn Propagation Delay ON = Step 0.8V to 2V
l
10 20 µs
Input/Output Pin
I
SENSE
SENSEn Input Current SENSE = 12V
l
10 50 100 µA
V
ON(TH)
ONn Threshold Voltage ON Rising
l
1.21 1.235 1.26 V
∆V
ON(HYST)
ONn Hysteresis
l
40 80 140 mV
V
ON(RESET)
ONn Fault Reset Threshold Voltage ON Falling
l
0.55 0.6 0.63 V
I
ON(LEAK)
ONn Input Leakage Current ON = 5V
l
0 ±1 µA
V
EN(TH)
ENn Threshold Voltage EN Rising
l
1.185 1.235 1.284 V
∆V
EN(HYST)
ENn Hysteresis
l
40 130 200 mV
I
EN(UP)
ENn Pull-Up Current EN = 1V
l
–7 –10 –13 µA
V
TMR(TH)
TMRn Threshold Voltage TMR Rising
TMR Falling
l
l
1.198
0.15
1.235
0.2
1.272
0.25
V
V
I
TMR(UP)
TMRn Pull-Up Current TMR = 1V, In Fault Mode
l
–75 –100 –125 µA
I
TMR(DN)
TMRn Pull-Down Current TMR = 2V, No Faults
l
1.4 2 2.6 µA
I
TMR(RATIO)
TMRn Current Ratio I
TMR(DN)
/I
TMR(UP)
l
1.4 2 2.7 %
I
OUT
OUTn Current OUT = 11V, IN = 12V, ON = 2V
OUT = 13V, IN = 12V, ON = 2V
l
l
50
2.2
120
4
µA
mA
V
OL
Output Low Voltage (FAULTn, PWRGDn) I = 1mA
l
0.15 0.4 V
V
OH
Output High Voltage (FAULTn, PWRGDn) I = –1µA
l
INTV
CC
– 1 INTV
CC
– 0.5 V
I
OH
Input Leakage Current (FAULTn, PWRGDn) V = 18V
l
0 ±1 µA
I
PU
Output Pull-Up Current
(FAULTn, PWRGDn)
V = 1.5V
l
–7 –10 –13 µA
t
RST(ON)
ONn Low to FAULTn High
l
20 40 µs
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All currents into device pins are positive; all currents out of
the device pins are negative. All voltages are referenced to GND unless
otherwise specified.
Note 3: An internal clamp limits the DGATE and CPO pins to a minimum of
10V above and a diode below IN. Driving these pins to voltages beyond the
clamp may damage the device.
Note 4: An internal clamp limits the HGATE pin to a minimum of 10V
above and a diode below OUT. Driving this pin to voltages beyond the
clamp may damage the device.
LTC4225-1/LTC4225-2
5
422512f
Typical perForMance characTerisTics
Diode Gate Voltage vs Current Hot Swap Gate Voltage vs Current OUT Current vs Voltage
Circuit Breaker Trip Voltage
vs Temperature
Active Current Limit Sense
Voltage vs Temperature
Active Current Limit Delay
vs Sense Voltage
IN Supply Current vs Voltage INTV
CC
Load Regulation CPO Voltage vs Current
T
A
= 25°C, V
IN
= 12V, unless otherwise noted.
V
IN
(V)
0
0
I
IN
(mA)
1
2
3
4
3 6 9 12
422512 G01
15 18
I
LOAD
(mA)
0
0
INTV
CC
(V)
1
2
3
4
5
6
–2 –4 –6 –8
422512 G02
–10
V
IN
= 12V
V
IN
= 3.3V
I
CPO
(µA)
0
12
10
8
6
4
2
0
–2
–60 –100
422512 G03
–20 –40
–80 –120
V
CPO
– V
IN
(∆V
CPO
) (V)
V
IN
= 18V
V
IN
= 2.9V
I
DGATE
(µA)
0
12
10
8
6
4
2
0
–2
–60 –100
422512 G04
–20 –40
–80 –120
V
DGATE
– V
IN
(∆V
DGATE
) (V)
V
IN
= 18V
V
IN
= 2.9V
V
OUT
= V
IN
– 0.1V
I
HGATE
(µA)
0
14
12
10
8
6
4
2
0
–6 –10
422712 G05
–2 –4
–8 –12
GATE DRIVE (∆V
HGATE
) (V)
V
IN
= 12V
V
OUT
= V
IN
V
IN
= 2.9V
TEMPERATURE (°C)
–50
48
CIRCUIT BREAKER TRIP VOLTAGE (mV)
49
50
51
52
–25 0 25 50
422512 G07
75 100
TEMPERATURE (°C)
–50
63
ACTIVE CURRENT LIMIT SENSE VOLTAGE (mV)
64
65
66
67
–25 0 25 50
422512 G08
75 100
SENSE VOLTAGE (V
IN
– V
SENSE
) (mV)
50
0.1
ACTIVE CURRENT LIMIT DELAY (µs)
10
100
100 150 200 250 300
422512 G09
1
C
HGATE
= 10nF
V
OUT
(V)
0
–0.5
I
OUT
(mA)
0
0.5
1.0
1.5
2.5
3
6 9 12
422512 G06
15 18
2.0
V
IN
= 12V
LTC4225-1/LTC4225-2
6
422512f
HGATE Pull-Up Current
vs Temperature
TMR Pull-Up Current
vs Temperature
PWRGD, FAULT Output Low
Voltage vs Current
Typical perForMance characTerisTics
T
A
= 25°C, V
IN
= 12V, unless otherwise noted.
pin FuncTions
CPO1, CPO2: Charge Pump Output. Connect a capacitor
from CPO1 or CPO2 to the corresponding IN1 or IN2 pin.
The value of this capacitor is approximately 10× the gate
capacitance (C
ISS
) of the external MOSFET for ideal diode
control. The charge stored on this capacitor is used to pull
up the gate during a fast turn-on. Leave this pin open if
fast turn-on is not needed.
DGATE1, DGATE2: Ideal Diode MOSFET Gate Drive Out-
put. Connect this pin to the gate of an external N-channel
MOSFET for ideal diode control. An internal clamp limits
the gate voltage to 12V above and a diode voltage below
IN. During fast turn-on, a 1.5A pull-up charges DGATE from
CPO. During fast turn-off, a 1.5A pull-down discharges
DGATE to IN.
EN1, EN2: Enable Input. Ground this pin to enable Hot
Swap control. If this pin is pulled high, the MOSFET is not
allowed to turn on. A 10µA current source pulls this pin
up to a diode below INTV
CC
. Upon EN going low when ON
is high, an internal timer provides a 100ms start-up delay
for debounce, after which the fault is cleared.
Exposed Pad (UFD Package): The exposed pad may be
left open or connected to device ground.
FAULT1, FAULT2: Fault Status Output. Open-drain output
that is normally pulled high by a 10µA current source to a
diode below INTV
CC
. It may be pulled above INTV
CC
using
an external pull-up. It pulls low when the circuit breaker
is tripped after an overcurrent fault timeout. Leave open
if unused.
GND: Device Ground.
HGATE1, HGATE2: Hot Swap MOSFET Gate Drive Output.
Connect this pin to the gate of the external N-channel
MOSFET for Hot Swap control. An internal 10µA current
source charges the MOSFET gate. An internal clamp limits
the gate voltage to 12V above and a diode below OUT.
During turn-off, a 300µA pull-down discharges HGATE to
ground. During an output short or INTV
CC
undervoltage
lockout, a fast 200mA pull-down discharges HGATE to OUT.
IN1, IN2: Positive Supply Input and MOSFET Gate Drive
Return. The 5V INTV
CC
supply is generated from IN1 and
IN2 via an internal diode-OR. The voltage sensed at this
pin is used to control DGATE for forward voltage regulation
and reverse turn-off. It also senses the positive side of
the current sense resistor. The gate fast pull-down current
returns through this pin when DGATE is discharged.
TEMPERATURE (°C)
–50
–9.0
HGATE PULL-UP CURRENT (µA)
–9.5
–10.0
–10.5
–11.0
–25 0 25 50
422512 G10
75 100
TEMPERATURE (°C)
–50
–97
TMR PULL-UP CURRENT (µA)
–98
–99
–100
–101
–103
–25
0 25 50
422512 G11
75 100
–102
CURRENT (mA)
0
OUTPUT LOW VOLTAGE (V)
0.4
0.6
4
422512 G12
0.2
0
1
2
3
5
0.8
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24

LTC4225CGN-1#TRPBF

Mfr. #:
Buy LTC4225CGN-1#TRPBF
Manufacturer:
Analog Devices Inc.
Description:
Hot Swap Voltage Controllers Dual Ideal Diode and Hot Swap Controller with LatchOff
Lifecycle:
New from this manufacturer.
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