LTC4225-1/LTC4225-2
13
422512f
Active Current Loop Stability
The active current loop on the HGATE pin is compensated
by the parasitic gate capacitance of the external N-channel
MOSFET. No further compensation components are nor-
mally required. In the case when a MOSFET with C
ISS
2nF is chosen, an R
HG
and C
HG
compensation network
connected at the HGATE pin may be required. The value
of C
HG
is selected based on the inrush current allowed for
the output load capacitance. The resistor, R
HG
, connected
in series with C
HG
accelerates the MOSFET gate recovery
for active current limiting after a fast gate pull-down due
to an output short. The value of C
HG
should be ≤100nF
and R
HG
should be between 10Ω and 100Ω for optimum
performance.
TMR Pin Functions
An external capacitor, C
T
, connected from the TMR pin to
GND serves as fault filtering when the supply output is in
active current limit. When the voltage across the sense
resistor exceeds the circuit breaker trip threshold (50mV),
TMR pulls up with 100µA. Otherwise, it pulls down with 2µA.
The fault filter times out when the 1.235V TMR threshold
is exceeded, causing the corresponding FAULT pin to pull
low. The fault filter delay or circuit breaker time delay is:
t
CB
= C
T
• 12[ms/µF]
After the circuit breaker timeout, the TMR pin capacitor
pulls down with 2µA from the 1.235V TMR threshold
until it reaches 0.2V. Then, it completes 14 cooling cycles
consisting of the TMR pin capacitor charging to 1.235V
with a 100µA current and discharging to 0.2V with a 2µA
current. At that point, the HGATE pin voltage is allowed to
start up if the fault has been cleared as described in the
Resetting Faults section. When the latched fault is cleared
during the cool-off period, the corresponding FAULT pin
pulls high. The total cool-off time for the MOSFET after
an overcurrent fault is:
t
COOL
= C
T
• 11[s/µF]
If the latched fault is not cleared after the cool-off period,
the cooling cycles continue until the fault is cleared.
After the cool-off period, the HGATE pin is only allowed to
pull up if the fault has been cleared for the latch-off part
(LTC4225-1). For the auto-retry part (LTC4225-2), the
latched fault is cleared automatically following the cool-off
period and the HGATE pin voltage is allowed to restart.
Resetting Faults (LTC4225-1)
For the latch-off part (LTC4225-1), an overcurrent fault
is latched after tripping the circuit breaker, and the cor-
responding FAULT pin is asserted low. If the LTC4225
controls the MOSFETs on two supplies, only the Hot Swap
MOSFET on the supply at fault is turned off and the other
is not affected.
To reset a latched fault and restart the output, pull the
corresponding ON pin below 0.6V for more than 100µs
and then high above 1.235V. The fault latches reset and
the FAULT pin deasserts on the falling edge of the ON pin.
When ON goes high again, a 100ms debounce cycle is
initiated before the HGATE pin voltage restarts. Toggling
the EN pin high and then low again also resets a fault,
but the FAULT pin pulls high at the end of the 100ms
debounce cycle before the HGATE pin voltage starts up.
Bringing all the supplies below the INTV
CC
undervoltage
lockout threshold (2.2V) shuts off all the MOSFETs and
resets all the fault latches. A 100ms debounce cycle is
initiated before a normal start-up when any of the supplies
is restored above the INTV
CC
UVLO threshold.
Auto-Retry after a Fault (LTC4225-2)
For the auto-retry part (LTC4225-2), the latched fault is reset
automatically after a cool-off timing cycle as described in
the TMR Pin Functions section. At the end of the cool-off
period, the fault latch is cleared and FAULT pulls high. The
HGATE pin voltage is allowed to start up and turn on the
Hot Swap MOSFET. If the output short persists, the supply
powers up into a short with active current limiting until
the circuit breaker times out and FAULT again pulls low. A
new cool-off cycle begins with TMR ramping down with
a 2µA current. The whole process repeats itself until the
output short is removed. Since t
CB
and t
COOL
are a func-
tion of TMR capacitance, C
T
, the auto-retry duty cycle is
equal to 0.1%, irrespective of C
T
.
Figure 6 shows an auto-retry sequence after an overcurrent
fault.
applicaTions inForMaTion
LTC4225-1/LTC4225-2
14
422512f
Supply Undervoltage Monitor
The ON pin functions as a turn-on control and an input
supply monitor. A resistive divider connected between
the input supply (IN1, IN2) and GND at the respective
ON pin monitors the supply undervoltage condition. The
undervoltage threshold is set by proper selection of the
resistors and is given by:
V
IN(UVTH)
= 1+
R
TOP
R
BOTTOM
V
ON(TH)
where V
ON(TH)
is the ON rising threshold (1.235V).
An undervoltage fault occurs if the input supply falls below
its undervoltage threshold for longer than 20µs. The FAULT
pin will not be pulled low. If the ON pin voltage falls below
1.155V but remains above 0.6V, the Hot Swap MOSFET is
turned off by a 300µA pull-down from HGATE to ground.
The Hot Swap MOSFET turns back on instantly without
the 100ms debounce cycle when the input supply rises
above its undervoltage threshold.
However, if the ON pin voltage drops below 0.6V, it turns
off the Hot Swap MOSFET and clears the associated fault
latches. The Hot Swap MOSFET turns back on only after a
100ms debounce cycle when the input supply is restored
above its undervoltage threshold. An undervoltage fault on
one supply does not affect the operation of the other sup-
ply. The ideal diode function controlled by the ideal diode
MOSFET is unaffected by undervoltage fault conditions.
If both IN supplies fall until the internally generated sup-
ply, INTV
CC
, drops below its 2.2V UVLO threshold, all the
MOSFETs are turned off and the fault latches are cleared.
Operation resumes from a fresh start-up cycle when the
input supplies are restored and INTV
CC
exceeds its UVLO
threshold.
There is a 10µs glitch filter on the ON pin to reject supply
glitches. By placing a filter capacitor, C
F
, with the resistive
divider at the ON pin, the glitch filter delay is further extended
by the RC time constant to prevent any false fault.
Power Good Monitor
Internal circuitry monitors the MOSFET gate overdrive
between the HGATE and OUT pins. The power good status
for each supply is reported via its respective open-drain
output, PWRGD1 or PWRGD2. They are normally pulled
high by an external pull-up resistor or the internal 10µA
pull-up. The power good output asserts low when the gate
overdrive exceeds 4.2V during the HGATE start-up. Once
asserted low, the power good status is latched and can only
be cleared by pulling the ON pin low, toggling the EN pin
from low to high, or INTV
CC
entering undervoltage lockout.
The power good output continues to pull low while HGATE
is regulating in active current limit, but pulls high when
the circuit breaker times out and pulls the HGATE pin low.
CPO and DGATE Start-Up
The CPO and DGATE pin voltages are initially pulled up to a
diode below the IN pin when first powered up. CPO starts
ramping up 7µs after INTV
CC
clears its undervoltage lockout
level. Another 40µs later, DGATE also starts ramping up
with CPO. The CPO ramp rate is determined by the CPO
pull-up current into the combined CPO and DGATE pin
capacitances. An internal clamp limits the CPO pin voltage
to 12V above the IN pin, while the final DGATE pin voltage
is determined by the gate drive amplifier. An internal 12V
clamp limits the DGATE pin voltage above IN.
applicaTions inForMaTion
Figure 6. Auto-Retry Sequence After a Fault
TMR
1V/DIV
HGATE
5V/DIV
FAULT
10V/DIV
I
LOAD
20A/DIV
50ms/DIV
422512 F06
LTC4225-1/LTC4225-2
15
422512f
MOSFET Selection
The LTC4225 drives N-channel MOSFETs to conduct the
load current. The important features of the MOSFETs are
on-resistance, R
DS(ON)
, the maximum drain-source volt-
age, BV
DSS
, and the threshold voltage.
The gate drive for the ideal diode MOSFET and Hot Swap
MOSFET is guaranteed to be greater than 5V and 4.8V
respectively when the supply voltages at IN1 and IN2 are
between 2.9V and 7V. When the supply voltages at IN1 and
IN2 are greater than 7V, the gate drive is guaranteed to be
greater than 10V. The gate drive is limited to not more than
14V. This allows the use of logic-level threshold N-channel
MOSFETs and standard N-channel MOSFETs above 7V. An
external Zener diode can be used to clamp the potential
from the MOSFETs gate to source if the rated breakdown
voltage is less than 14V.
The maximum allowable drain-source voltage, BV
DSS
,
must be higher than the supply voltages as the full sup-
ply voltage can appear across the MOSFET. If an input or
output is connected to ground, the full supply voltage will
appear across the MOSFET. The R
DS(ON)
should be small
enough to conduct the maximum load current, and also
stay within the MOSFET s power rating.
CPO Capacitor Selection
The recommended value of the capacitor, C
CP
, between the
CPO and IN pins is approximately 10× the input capaci-
tance, C
ISS
, of the ideal diode MOSFET. A larger capacitor
takes a correspondingly longer time to charge up by the
internal charge pump. A smaller capacitor suffers more
voltage drop during a fast gate turn-on event as it shares
charge with the MOSFET gate capacitance.
Supply Transient Protection
When the capacitances at the input and output are very
small, rapid changes in current during input or output short-
circuit events can cause transients that exceed the 24V
absolute maximum ratings of the IN and OUT pins. To mini-
mize such spikes, use wider traces or heavier trace plating
to reduce the power trace inductance. Also, bypass locally
with a 10µF electrolytic and 0.1µF ceramic, or alternatively
clamp the input with a transient voltage suppressor (Z1, Z2).
A 10Ω, 0.1µF snubber damps the response and eliminates
ringing (See Figure 11).
Design Example
As a design example for selecting components, consider
a 12V system with a 7.6A maximum load current for the
two supplies (see Figure 1).
First, select the appropriate value of the current sense
resistors (R
S1
and R
S2
) for the 12V supply. Calculate
the sense resistor value based on the maximum load
current I
LOAD(MAX)
, the minimum circuit breaker trip cur-
rent I
TRIP(MIN)
and the lower limit for the circuit breaker
threshold ∆V
SENSE(CB)(MIN)
. A load current margin given
as a ratio of I
TRIP(MIN)
/I
LOAD(MAX)
is provided for allowing
backfeeding current to flow through the sense resistor
momentarily, without false tripping the circuit breaker on
the higher supply before the reverse turn-off is activated on
the lower supply. Assuming a load current margin of 1.5×,
I
TRIP(MIN)
= 1.5 • I
LOAD(MAX)
= 1.5 • 7.6A = 11.4A
R
S
=
V
SENSE(CB)(MIN)
I
TRIP(MIN)
=
47.5mV
11.4A
= 4.16m
Choose a 4mΩ sense resistor with a 1% tolerance.
Next, calculate the R
DS(ON)
of the MOSFET to achieve
the desired forward drop at maximum load. Assuming a
forward drop, V
FWD
of 60mV across the two MOSFETs
connected back-to-back:
R
DS(ON,TOTAL)
V
FWD
I
LOAD(MAX)
=
60mV
7.6A
= 7.9m
The Si7336ADP offers a good choice with a maximum
R
DS(ON)
of 3mΩ at V
GS
= 10V, thereby giving a total of
6mΩ for two MOSFETs in the supply path. The input ca-
pacitance, C
ISS
, of the Si7336ADP is about 5600pF. Slightly
exceeding the 10× recommendation, a 0.1µF capacitor is
selected for C
CP1
and C
CP2
at the CPO pins.
applicaTions inForMaTion

LTC4225IUFD-2#TRPBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Hot Swap Voltage Controllers Dual Ideal Diode and Hot Swap Controller with LatchOff
Lifecycle:
New from this manufacturer.
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