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IRFS11N50APBF

P1-P3P4-P6P7-P9P10-P10
IRFS11N50A, SiHFS11N50A
www.vishay.com
Vishay Siliconix
S13-1927-Rev. E, 09-Sep-13
1
Document Number: 91286
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Low Gate Charge Q
g
results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective C
oss
Specified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half and Full Bridge
• Power Factor Correction Boost
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 4.5 mH, R
g
= 25 , I
AS
= 11 A (see fig. 12).
c. I
SD
11 A, dI/dt 140 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 500
R
DS(on)
()V
GS
= 10 V 0.52
Q
g
(Max.) (nC) 52
Q
gs
(nC) 13
Q
gd
(nC) 18
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
G
D
S
Available
Available
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263) D
2
PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHFS11N50A-GE3 SiHFS11N50ATRR-GE3
a
SiHFS11N50ATRL-GE3
a
Lead (Pb)-free IRFS11N50APbF IRFS11N50ATRRP
a
IRFS11N50ATRLP
a
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
500
V
Gate-Source Voltage V
GS
± 30
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
11
AT
C
= 100 °C
7.0
Pulsed Drain Current
a
I
DM
44
Linear Derating Factor
1.3
W/°C
Single Pulse Avalanche Energy
b
E
AS
275
mJ
Repetitive Avalanche Current
a
I
AR
11
A
Repetitive Avalanche Energy
a
E
AR
17
mJ
Maximum Power Dissipation T
C
= 25 °C P
D
170
W
Peak Diode Recovery dV/dt
c
dV/dt
6.9
V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s
300
IRFS11N50A, SiHFS11N50A
www.vishay.com
Vishay Siliconix
S13-1927-Rev. E, 09-Sep-13
2
Document Number: 91286
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising fom 0 % V
DS
to 80 % V
DS
.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Case (Drain) R
thJC
-0.75
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.50 -
Maximum Junction-to-Ambient R
thJA
-62
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 500 - - V
V
DS
Temperature Coefficient
V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA
-0.060-
V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 25
μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 6.6 A
b
- - 0.52
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 6.6 A 6.1 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 1423 -
pF
Output Capacitance C
oss
- 208 -
Reverse Transfer Capacitance C
rss
-8.1-
Output Capacitance C
oss
V
GS
= 0 V
V
DS
= 1.0 V, f = 1.0 MHz - 2000 -
V
DS
= 400 V, f = 1.0 MHz - 55 -
Effective Output Capacitance C
oss
eff. V
DS
= 0 V to 400 V
c
-97-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 11 A, V
DS
= 400 V
see fig. 6 and 13
b
--52
nC Gate-Source Charge Q
gs
--13
Gate-Drain Charge Q
gd
--18
Turn-On Delay Time t
d(on)
V
DD
= 250 V, I
D
= 11 A
R
g
= 9.1 , R
D
= 22
see fig. 10
b
-14-
ns
Rise Time t
r
-35-
Turn-Off Delay Time t
d(off)
-32-
Fall Time t
f
-28-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--11
A
Pulsed Diode Forward Current
a
I
SM
--44
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 11 A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 11 A, dI/dt = 100 A/μs
b
- 510 770 ns
Body Diode Reverse Recovery Charge Q
rr
-3.45.1μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G
IRFS11N50A, SiHFS11N50A
www.vishay.com
Vishay Siliconix
S13-1927-Rev. E, 09-Sep-13
3
Document Number: 91286
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
P1-P3P4-P6P7-P9P10-P10

IRFS11N50APBF

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Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 500V HEXFET MOSFET D2-PA
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