3KBP08M-01E4/P

New Product
3KBP005M thru 3KBP08M
Vishay General Semiconductor
Document Number: 88888
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
UL recognition file number E54214
Ideal for printed circuit board
High surge current capability
High case dielectric strength
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: KBPM
Epoxy meets UL 94V-0 flammability rating
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity: As marked on body
e4
PRIMARY CHARACTERISTICS
I
F(AV)
3 A
V
RRM
50 V to 800 V
I
FSM
80 A
I
R
5 µA
V
F
1.05 V
T
J
max. 150 °C
Case Style KBPM
+~~−
+
~
~
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
3KBP
005M
3KBP
01M
3KBP
02M
3KBP
04M
3KBP
06M
3KBP
08M
UNIT
Maximum repetitive peak reverse voltage
V
RRM
50 100 200 400 600 800 V
Maximum RMS voltage
V
RMS
35 70 140 280 420 560 V
Maximum DC blocking voltage
V
DC
50 100 200 400 600 800 V
Maximum average forward output rectified current
at T
A
= 55 °C (Fig. 1)
I
F(AV)
3.0 A
Peak forward surge current 50 Hz single half
sine-wave superimposed on rated load
I
FSM
80 A
Rating for fusing (t < 10 ms)
I
2
t
32
A
2
s
Operating junction and storage temperature range
T
J
, T
STG
- 55 to + 150 °C
New Product
3KBP005M thru 3KBP08M
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88888
Revision: 15-Apr-08
2
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x 12 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
3KBP
005M
3KBP
01M
3KBP
02M
3KBP
04M
3KBP
06M
3KBP
08M
UNIT
Maximum instantaneous forward
voltage drop per diode
3.0 A
V
F
1.05 V
Maximum DC reverse current
at rated DC blocking voltage
per diode
T
A
= 25 °C
T
A
= 125 °C
I
R
5.0
500
µA
Typical junction capacitance
per diode
4.0 V, 1 MHz
C
J
25 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
3KBP
005M
3KBP
01M
3KBP
02M
3KBP
04M
3KBP
06M
3KBP
08M
UNIT
Typical thermal resistance
(1)
R
θJA
R
θJL
30
11
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
3KBP06M-E4/45 1.912 45 30 Tube
3KBP06M-E4/51 1.912 51 600 Anti-static PVC tray
Figure 1. Forward Current Derating Curve
0
20
40
60
80
100
120
140
160
0
1
2
3
4
60 Hz
Resistive or
Inductive Load
With Heat Sink
Without Heat Sink
Heat Sink Mounting:
3.0 x 3.0 x 0.11" Thick
(7.5 x 7.5 x 0.3 cm) Al. Plate
Ambient Temperature (°C)
Average Forward Cu
rrent (A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
New Product
3KBP005M thru 3KBP08M
Vishay General Semiconductor
Document Number: 88888
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.5
0.4
0.6
0.8
1.0
1.2
1.1
0.01
0.1
1
10
0.7
0.9
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Instantaneous Forward Volta
g
e (V)
Instantaneous Forward Current (A)
10
20
40
60
80
100
0.01
0.1
1
10
100
30
50
70
90
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Figure 5. Typical Junction Capacitance Per Diode
0.1
1
10
100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Polarity shown on front side of case: positive lead by beveled corner
0.125 x 45°
(3.2)
0.600 (15.24)
0.560 (14.22)
0.034 (0.86)
0.028 (0.76)
0.105 (2.67)
0.085 (2.16)
0.160 (4.1)
0.140 (3.6)
0.060
(1.52)
0.460 (11.68)
0.50 (12.7) MIN.
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
0.60
(15.2)
MIN.
DIA.
0.200 (5.08)
0.180 (4.57)
Case Style KBPM

3KBP08M-01E4/P

Mfr. #:
Manufacturer:
Vishay
Description:
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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