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T2563N80TOHXPSA1

P1-P3P4-P6P7-P9P10-P10
Netz-Thyristor
Phase Control Thyristor
Technische Information /
technical information
T2563N
Date of Publication: 2011-05-02
Revision: 11.0
Seite/page: 1/10
enndaten
V
BO
/ V
RRM
7500V / 8000V
I
TAVM
2300A (T
C
=85°C)
3570A (T
C
=55°C)
I
TSM
93000A
v
T0
1,2V
r
T
0,35mΩ
R
thJC
4,5K/kW
Clamping Force
90 … 130kN
Max. Diameter
172,5mm
Contact Diameter
115mm
Height
40mm
For type designation please refer to actual shortform
catalog
http://www.ifbip.com/catalog
Features
Light triggered thyristor with internal Break over Diode
Full blocking 50/60Hz over a wide range temperature
range
High DC blocking stability
High surge current capability
High di/dt capability
Typical Applications
High Voltage Direct Current Transmission HVDC
Static Var Compensation SVC
Medium Voltage Drives
Crowbar Applications
Pulsed Power Applications
content of customer DMX code
DMX code
DMX code
digit
digit quantity
serial number
1..7
7
SP material number
8..16
9
datecode (production day)
17..18
2
datecode (production year)
19..20
2
datecode (production month)
21..22
2
vT class
23..26
4
QR class
27..30
4
www.ifbip.com
support@infineon-bip.com
1
2
4.1
Netz-Thyristor
Phase Control Thyristor
Technische Information /
technical information
T2563N
Date of Publication: 2011-05-02
Revision: 11.0
Seite/page: 2/10
Elektrische Eigenschaften
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Periodische Rückwärts-Spitzensperrspannung
repetitive peak and reverse voltage
T
vj
= -40°C... T
vj max
V
RRM
7500
8000
V
V
Durchlaßstrom-Effektivwert
maximum RMS on-state current
T
C
= 85 °C
I
TRMSM
3600
A
Dauergrenzstrom
average on-state current
T
C
= 85 °C
T
C
= 70 °C
T
C
= 55 °C
I
TAVM
2300
2850
3330
A
A
A
Stoßstrom-Grenzwert
surge current
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
TSM
93000
90000
A
A
Grenzlastintegral
I²t-value
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I²t
43250
40500
10³ A²s
10³ A²s
Kritische Stromsteilheit
critical rate of rise of on-state current
DIN IEC 60747-6
f = 50 Hz, P
LM
= 40mW, t
rise
= 0,5µs
(di
T
/dt)
cr
300
A/µs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
5.Kennbuchstabe / 5
th
letter H
(dv
D
/dt)
cr
2000
V/µs
Charakteristische Werte / characteristic values
Schutzzündspannung (statisch)
protective break over voltage
T
vj
= 25°C … T
vj
max
Typischer Degradationsfaktor ist 0,16%/K
für Tvj = 0°C..25°C
Typical de-rating factor of 0,16%/K is
applicable for T
vj
= 0°C..25°C
V
BO
min.
7500
V
Durchlaßspannung
on-state voltage
T
vj
= T
vj max
, i
T
= 5000A, v
D
= 150V
v
T
typ.
max.
2,75
2,95
V
V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
typ.
max.
1,12
1,20
V
V
Ersatzwiderstand
slope resistance
T
vj
= T
vj max
r
T
typ.
max.
0,326
0,350
mΩ
mΩ
Durchlaßkennlinie 500A i
F
6000A
on-state characteristic
T
TTT
iD)1i(LnCiBAv
T
vj
= T
vj max
typ.
A
1,2357
B
-2,89E-05
C
-0,1322
D
0,03946
max.
A
1,2406
B
-2,253E-05
C
-0,1232
D
0,04056
minimale Zündlichtleistung
minimum gate trigger light power
T
vj
= 25°C, v
D
= 150V
P
LM
max.
40
mW
Haltestrom
holding current
T
vj
= 25°C
I
H
max.
100
mA
Einraststrom
latching current
T
vj
= 25°C, v
D
= 150V,
P
LM
= 40mW, t
rise
= 0,5µs
I
L
max.
1
A
Rückwärts-Sperrstrom
reverse blocking current
T
vj
= T
vj max
v
R
= V
RRM
i
R
max.
900
mA
Zündverzug
gate controlled delay time
DIN IEC 60747-6
T
vj
= 25 °C, vD = 1000V ,
P
LM
= 40mW, t
rise
= 0,5µs
t
gd
max.
5
µs
prepared by:
TM
date of publication:
2011-05-02
approved by:
JP
revision:
11.0
Netz-Thyristor
Phase Control Thyristor
Technische Information /
technical information
T2563N
Date of Publication: 2011-05-02
Revision: 11.0
Seite/page: 3/10
Thermische Eigenschaften
Mechanische Eigenschaften
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
Freiwerdezeit
circuit commutated turn-off time
T
vj
= T
vj max
, i
TM
= I
TAVM
v
RM
= 100 V, v
DM
= 0,67 V
DRM
dv
D
/dt = 20 V/µs, -di
T
/dt = 10 A/µs
4.Kennbuchstabe / 4
th
letter O
t
q
typ.
550
µs
Sperrverzögerungsladung
recovered charge
T
vj
= T
vj max
i
TM
= I
TAVM
, -di
T
/dt = 10 A/µs
V
R
= 0,5V
RRM
, V
RM
= 0,8V
RRM
Q
r
max.
22
mAs
Rückstromspitze
peak reverse recovery current
T
vj
= T
vj max
i
TM
= I
TAVM
, -di
T
/dt = 10 A/µs
V
R
= 0,5V
RRM
, V
RM
= 0,8V
RRM
I
RM
max.
400
A
Thermische Eigenschaften / thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Kühlfläche / cooling surface
beidseitig / two-sided, θ = 180°sin
beidseitig / two-sided, DC
Anode / anode, DC
Kathode / cathode, DC
R
thJC
max.
max.
max.
max.
4,8
4,5
8,2
10,0
K/kW
K/kW
K/kW
K/kW
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Kühlfläche / cooling surface
beidseitig / two-sided
einseitig / single-sided
R
thCH
max.
max.
1,0
2,0
K/kW
K/kW
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
T
vj max
120
°C
Betriebstemperatur
operating temperature
T
c op
-40...+120
°C
Lagertemperatur
storage temperature
T
stg
-40...+150
°C
Mechanische Eigenschaften / mechanical properties
Gehäuse, siehe Anlage
case, see annex
Seite 4
page 4
Si-Element mit Druckkontakt
Si-pellet with pressure contact
Anpresskraft
clamping force
F
90...130
kN
Gewicht
weight
G
typ.
4000
g
Kriechstrecke
creepage distance
49
mm
Schwingfestigkeit
vibration resistance
f = 50 Hz
50
m/s²
P1-P3P4-P6P7-P9P10-P10

T2563N80TOHXPSA1

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Buy T2563N80TOHXPSA1
Manufacturer:
Infineon Technologies
Description:
SCR MODULE 3600A DO200AE
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