ZXM64P02XTC

Top View
SUMMARY
V
(BR)DSS
=-20V; R
DS(ON)
=0.090V; I
D
= -3.5A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
TAPE WIDTH (mm) QUANTITY
PER REEL
ZXM64P02XTA 7 12mm embossed 1000 units
ZXM64P02XTC 13 12mm embossed 4000 units
DEVICE MARKING
ZXM64P02
20V P-CHANNEL ENHANCEMENT MODE MOSFET
MSOP8
ZXM64P02X
1234
8
7
65
S
S
S
G
D
D
D
D
1
Issue 2
- February 2008
ZXM64P02X
2
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
θJA
113 °C/W
Junction to Ambient (b) R
θJA
70 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DSS
-20 V
Gate- Source Voltage V
GS
± 12
V
Continuous Drain Current (V
GS
=4.5V; T
A
=25°C)(b)
(V
GS
=4.5V; T
A
=70°C)(b)
I
D
-3.5
-2.8
A
Pulsed Drain Current (c) I
DM
-19 A
Continuous Source Current (Body Diode)(b) I
S
-2.0 A
Pulsed Source Current (Body Diode)(c) I
SM
-19 A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
P
D
1.1
8.8
W
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
1.8
14.4
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
Issue 2 - February 2008
ZXM64P02X
0.1 10 100
0.0001 100
080160
-VDS - Drain-Source Voltage (V)
Safe Operating Area
100m
1
100
-I
D
- Drain Current (A)
DC
1s
100ms
D=0.1
D=0.2
Thermal Resistance (°C/W)
80
40
0
Max Power Dissipation (Watts)
2.0
1.0
0
T - Temperature (°C)
Derating Curve
Single Pulse
D=0.5
10ms
1ms
Themal Resistance (°C/W)
0.0001
0
1000
60
120
Single Pulse
D=0.5
D=0.2
D=0.1
1
10
0.5
1.5
140120100604020
1010.010.001 1001010.10.010.001
90
30
60
20
0.1
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Transient Thermal Impedance
100us
Refer Note (a)
Refer Note (b)
Refer Note (a)
Refer Note (b)
Refer Note (a)
CHARACTERISTICS
3
Issue 2 - February 2008

ZXM64P02XTC

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET 20V P-Chnl HDMOS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet