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HMC-APH633

P1-P3P4-P6
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 220
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
v03.0209
General Description
Features
Functional Diagram
Gain: 13 dB
P1dB: +20 dBm
Supply Voltage: +4V
50 Ohm Matched Input/Output
Die Size: 2.47 x 1.60 x 0.05 mm
Electrical Speci cations, T
A
= +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240 mA
[2]
Typical Applications
This HMC-APH633 is ideal for:
• Short Haul / High Capacity Links
• Wireless LAN Bridges
• Military & Space
• E-Band Communication Systems
The HMC-APH633 is a two stage GaAs HEMT MMIC
Medium Power Ampli er which operates between
71 and 76 GHz. The HMC-APH633 provides 13 dB
of gain, and an output power of +20 dBm at 1 dB
compression from a +4V supply voltage. All bond
pads and the die backside are Ti/Au metallized
and the ampli er device is fully passivated for reliable
operation. The HMC-APH633 GaAs HEMT MMIC
Medium Power Ampli er is compatible with conven-
tional die attach methods, as well as thermocomp-
ression and thermosonic wire bonding, making it
ideal for MCM and hybrid microcircuit applications.
All data shown herein is measured with the chip in
a 50 Ohm environment and contacted with RF
probes.
HMC-APH633
Parameter Min. Typ. Max. Units
Frequency Range 71-76 GHz
Gain 9 13 dB
Input Return Loss 8dB
Output Return Loss 10 dB
Output power for 1dB Compression (P1dB) 20 dBm
Supply Current (Idd1+Idd2) 240 mA
[1] Unless otherwise indicated, all measurements are from probed die.
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.1V) to achieve Idd
total
= 240 mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 221
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-APH633
v03.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Fixtured Pout vs. Frequency
Output Return Loss vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
68 70 72 74 76 78 80
RETURN LOSS (dB)
FREQUENCY (GHz)
15
16
17
18
19
20
21
22
70 71 72 73 74 75
P1dB (dBm)
FREQUENCY (GHz)
5
6
7
8
9
10
11
12
13
14
15
68 70 72 74 76 78 80
GAIN (dB)
FREQUENCY (GHz)
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
68 70 72 74 76 78 80
RETURN LOSS (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 222
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-APH633
v03.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Outline Drawing
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. BACKSIDE METALLIZATION: GOLD.
3. BACKSIDE METAL IS GROUND.
4. BOND PAD METALLIZATION: GOLD.
5. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
6. OVERALL DIE SIZE
±
.002”
Drain Bias Voltage +4.5V
Gate Bias Voltage -0.8 to +0.3V
RF Input 14 dBm
Thermal Resistance
(Channel to die bottom)
61.6 °C/W
Channel Temperature 180 °C
Storage Temperature -65 °C to +150 °C
Operating Temperature -55 °C to +85 °C
Drain Bias Current (Idd1) 100 mA
Drain Bias Current (Idd2) 200 mA
Die Packaging Information
[1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
P1-P3P4-P6

HMC-APH633

Mfr. #:
Buy HMC-APH633
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier GaAs HEMT MMIC 1 Watt pow amp, 71-76 GHz
Lifecycle:
New from this manufacturer.
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