Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage
1.6 2 2.4 V
5.5 7.3 9
T
J
=125°C 9.4 11.5
7 10.3 13.5 mΩ
g
FS
91 S
V
SD
0.7 1 V
I
S
35 A
C
iss
850 1150 1500 pF
C
oss
300 500 800 pF
C
rss
15 60 150 pF
R
g
0.7 1.5 2.3 Ω
Q
g
(10V) 18 nC
Q
g
(4.5V) 8.8 nC
Q
gs
4.1 nC
Q
gd
3.6 nC
Q
gs
4.1 nC
Q
gd
3.6 nC
t
D(on)
7.3 ns
t
r
10.5 ns
Gate Source Charge
V
GS
=4.5V, V
DS
=15V, I
D
=20A
Gate Drain Charge
V
DS
=0V, V
GS
= ±20V
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Forward Transconductance
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=20A
R
DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
mΩ
V
GS
=10V, I
D
=20A
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
I
D
=250µA, V
GS
=0V
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
V
GS
=10V, V
DS
=15V, I
D
=20A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
V
DS
=V
GS，
I
D
=250µA
Turn-On Rise Time
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
Turn-On DelayTime
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
t
D(off)
21.8 ns
t
f
5 ns
t
rr
14.7 ns
Q
rr
15 24 36
nC
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
GEN
Turn-Off Fall Time
I
F
=20A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev.4.0: March 2014 www.aosmd.com Page 2 of 6
