MD2009DFP

P1-P3 P4-P6 P7-P9 P10-P10

August 2009 Doc ID 16108 Rev 1 1/10

10

MD2009DFP

High voltage NPN power transistor for CRT TV

Features

■ State-of-the-art technology:

– diffused collector “enhanced generation”

■ Stable performance versus operating

temperature variation

■ Low base drive requirement

■ Tight h

FE

range at operating collector current

■ Fully isolated power package UL compliant

■ Integrated free wheeling diode

Application

■ Horizontal deflection output for CRT TV

Description

The MD2009DFP is manufactured using diffused

collector in planar technology adopting new and

enhanced high voltage structure. The new MD

product series show improved silicon efficiency

bringing updated performance to the horizontal

deflection stage.

Figure 1. Internal schematic diagram

TO-220FP

1

2

3

R

BE

=60Ω typ.

Table 1. Device summary

Order code Marking Package Packaging

MD2009DFP MD2009DFP TO-220FP Tube

www.st.com

Electrical ratings MD2009DFP

2/10 Doc ID 16108 Rev 1

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

CES

Collector-emitter voltage (V

BE

= 0) 1500 V

V

CEO

Collector-emitter voltage (I

B

= 0) 700 V

V

EBO

Base-emitter voltage (I

C

= 0) 7 V

I

C

Collector current 10 A

I

CM

Collector peak current (t

P

< 5ms) 16 A

I

B

Base current 6 A

P

TOT

Total dissipation at T

c

= 25°C 40 W

V

ISO

Isolation withstand voltage (RMS) from all three

leads to external heatsink

2500 V

T

stg

Storage temperature

-65 to 150

150

°C

T

J

Max. operating junction temperature

Table 3. Thermal data

Symbol Parameter Value Unit

R

thj-case

Thermal resistance junction-case max 3.12 °C/W

MD2009DFP Electrical characteristics

Doc ID 16108 Rev 1 3/10

2 Electrical characteristics

(T

case

=25°C unless otherwise specified)

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CES

Collector cut-off

current (V

BE

= 0)

V

CE

= 1500V

V

CE

= 1500V, T

c

= 125°C

0.2

2

mA

mA

I

EBO

Emitter cut-off current

(I

C

= 0)

V

EB

= 5V 40 120 mA

V

(BR)EBO

Emitter-base

breakdown voltage

(I

C

= 0)

I

E

= 700mA 10 V

V

CE(sat)

(1)

1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2%.

Collector-emitter

saturation voltage

I

C

= 5.5A , I

B

= 1.4A 2.8 V

V

BE(sat)

(1)

Base-emitter

saturation voltage

I

C

= 5.5A , I

B

= 1.4A 1.3 V

h

FE

(1)

DC current gain

I

C

= 1A, V

CE

= 5V

I

C

= 5.5A, V

CE

= 1V

I

C

= 5.5A , V

CE

= 5V 5

18

4.7

7

V

F

(1)

Diode forward voltage I

F

= 5.5 A 1.6 V

t

s

t

f

Inductive load

Storage time

Fall time

I

C

= 5A,,, f

h

= 16KHz

I

B(on)

= 1.5A,, V

BE(off)

= -2.7V

L

BB(off)

= 6.2µH

4.5

0.3

6

0.6

µs

µs

P1-P3 P4-P6 P7-P9 P10-P10

MD2009DFP

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Bipolar Transistors - BJT High volt NPN power transistor CRT TV

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet

MD2009DFP