PMV30UN2R Datasheet PMV30UN2R, PMV30UN2VL | P7-P9

NXP Semiconductors

PMV30UN2

20 V, N-channel Trench MOSFET

Product data sheet 24 April 2014 6 / 15

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source

breakdown voltage

I

D

= 250 µA; V

GS

= 0 V; T

j

= 25 °C 20 - - V

V

GSth

gate-source threshold

voltage

I

D

= 250 µA; V

DS

= V

GS

; T

j

= 25 °C 0.4 0.65 0.9 V

I

DSS

drain leakage current V

DS

= 20 V; V

GS

= 0 V; T

j

= 25 °C - - 1 µA

V

GS

= 12 V; V

DS

= 0 V; T

j

= 25 °C - - 100 nAI

GSS

gate leakage current

V

GS

= -12 V; V

DS

= 0 V; T

j

= 25 °C - - -100 nA

V

GS

= 4.5 V; I

D

= 4.2 A; T

j

= 25 °C - 24 32 mΩ

V

GS

= 4.5 V; I

D

= 4.2 A; T

j

= 150 °C - 37 50 mΩ

V

GS

= 2.5 V; I

D

= 3.7 A; T

j

= 25 °C - 30 43 mΩ

V

GS

= 1.8 V; I

D

= 1.0 A; T

j

= 25 °C - 40 59 mΩ

V

GS

= 1.5 V; I

D

= 0.1 A; T

j

= 25 °C - 56 100 mΩ

R

DSon

drain-source on-state

resistance

V

GS

= 1.2 V; I

D

= 10 mA; T

j

= 25 °C - 160 - mΩ

g

fs

forward

transconductance

V

DS

= 10 V; I

D

= 2 A; T

j

= 25 °C - 15.8 - S

R

G

gate resistance f = 1 MHz; T

j

= 25 °C - 7.6 - Ω

Dynamic characteristics

Q

G(tot)

total gate charge - 6.2 11 nC

Q

GS

gate-source charge - 0.8 - nC

Q

GD

gate-drain charge

V

DS

= 10 V; I

D

= 4.2 A; V

GS

= 4.5 V;

T

j

= 25 °C

- 1.4 - nC

C

iss

input capacitance - 655 - pF

C

oss

output capacitance - 70 - pF

C

rss

reverse transfer

capacitance

V

DS

= 10 V; f = 1 MHz; V

GS

= 0 V;

T

j

= 25 °C

- 62 - pF

t

d(on)

turn-on delay time - 7 - ns

t

r

rise time - 26 - ns

t

d(off)

turn-off delay time - 35 - ns

t

f

fall time

V

DS

= 10 V; I

D

= 4.2 A; V

GS

= 4.5 V;

R

G(ext)

= 6 Ω; T

j

= 25 °C

- 10 - ns

Source-drain diode

V

SD

source-drain voltage I

S

= 0.9 A; V

GS

= 0 V; T

j

= 25 °C - 0.7 1.2 V

NXP Semiconductors

PMV30UN2

20 V, N-channel Trench MOSFET

Product data sheet 24 April 2014 7 / 15

V

DS

(V)

0 431 2

aaa-012419

6

12

18

I

D

(A)

0

1

.

5 V

V

G

S

=

1

.

2 V

1

.

8 V

2.0 V

4.5 V

2.5 V

T

j

= 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-012420

V

GS

(V)

0 1.510.5

10

-4

10

-5

10

-3

I

D

(A)

10

-6

typ maxmin

T

j

= 25 °C; V

DS

= 5 V

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

aaa-012421

I

D

(A)

0 18126

V

GS

= 4.5 V

3.0 V

2.0 V

1.8 V

1.5 V

1.2 V

0.10

0.05

0.15

0.20

R

DSon

(Ω)

0

T

j

= 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

V

GS

(V)

0 542 31

aaa-012422

0.1

0.2

0.3

R

DSon

(Ω)

0

T

j

= 150 °C

T

j

= 25 °C

I

D

= 4.2 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

NXP Semiconductors

PMV30UN2

20 V, N-channel Trench MOSFET

Product data sheet 24 April 2014 8 / 15

V

GS

(V)

0 321

aaa-012423

6

12

18

I

D

(A)

0

T

j

= 150 °C

T

j

= 25 °C

V

DS

> I

D

× R

DSon

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

T

j

(°C)

-60 1801200 60

aaa-012424

1

0.5

1.5

2

a

0

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

T

j

(°C)

-60 1801200 60

aaa-012425

0.5

1.0

1.5

V

GS(th)

(V)

0

min

typ

max

I

D

= 250 µA; V

DS

= V

GS

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

aaa-012427

V

DS

(V)

10

-1

10

2

101

10

2

10

3

C

(pF)

10

C

iss

C

oss

C

rss

f = 1 MHz; V

GS

= 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PMV30UN2R

PMV30UN2R

Products related to this Datasheet