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ILQ620-X001

P1-P3P4-P6P7-P9
ILD620, ILD620GB, ILQ620, ILQ620GB
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 12-Apr-13
1
Document Number: 83653
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, AC Input
(Dual, Quad Channel)
DESCRIPTION
The ILD620, ILQ620, ILD620GB, and ILQ620GB are
multi-channel input phototransistor optocouplers that use
inverse parallel GaAs IRLED emitter and high gain NPN
silicon phototransistors per channel. These devices are
constructed using over/under leadframe optical coupling
and double molded insulation resulting in a withstand test
voltage of 5300 V
RMS
.
The LED parameters and the linear CTR characteristics
make these devices well suited for AC voltage detection.
The ILD620GB and ILQ620GB with its low I
F
guaranteed
CTR
CEsat
minimizes power dissipation of the A
C
voltage
detection network that is placed in series with the LEDs.
Eliminating the phototransistor base connection provides
added electrical noise immunity from the transients found in
many industrial control environments.
FEATURES
• Identical channel to channel footprint
• ILD620 crosses to TLP620-2
• ILQ620 crosses to TLP620-4
• High collector emitter voltage, BV
CEO
= 70 V
• Dual and quad packages feature:
- Reduced board space
- Lower pin and parts count
- Better channel to channel CTR match
- Improved common mode rejection
• Isolation test voltage 5300 V
RMS
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
• cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-5 (VDE 0884)
•FIMKO
• CQC GB4943.1-2011 and GB8898:2011 (suitable for
installation altitude below 2000 m)
Notes
• Additional options may be possible, please contact sales office.
(1)
Also available in tubes, do not put T on the end.
E
C
C
E
1
2
3
4
8
7
6
5
A/C
A/C
A/C
A/C
E
C
C
E
E
C
C
E
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
A/C
A/C
A/C
A/C
A/C
A/C
A/C
A/C
V
DE
Dual Channel
Quad Channel
ORDERING INFORMATION
ILx620xx-X0##T
PART NUMBER
x = D (Dual) or Q (Quad)
PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE
DUAL CHANNEL QUAD CHANNEL
CTR (%)
UL, cUL, FIMKO 50 to 600 100 to 600 50 to 600 100 to 600
DIP-8 ILD620 ILD620GB - -
SMD-8, option 7 ILD620-X007T
(1)
---
SMD-8, option 9 ILD620-X009T
(1)
ILD620GB-X009T
(1)
--
DIP-16 - - ILQ620 ILQ620GB
SMD-16, option 7 - - ILQ620-X007 -
SMD-16, option 9 - - ILQ620-X009T
(1)
ILQ620GB-X009T
(1)
VDE, UL, cUL, FIMKO 50 to 600 100 to 600 50 to 600 100 to 600
DIP-16 - - ILQ620-X001 -
SMD-16, option 9 - - ILQ620-X019T
(1)
-
> 0.1 mm
> 0.7 mm
7.62 mm
DIP
Option 7
Option 9
ILD620, ILD620GB, ILQ620, ILQ620GB
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 12-Apr-13
2
Document Number: 83653
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Forward current I
F
± 60 mA
Surge current I
FSM
± 1.5 A
Power dissipation P
diss
100 mW
Derate linearly from 25 °C 1.3 mW/°C
OUTPUT
Collector emitter breakdown voltage BV
CEO
70 V
Collector current
I
C
50 mA
t < 1 s I
C
100 mA
Power dissipation P
diss
150 mW
Derate from 25 °C 2mW/°C
COUPLER
Isolation test voltage t = 1 s V
ISO
5300 V
RMS
Isolation voltage V
IORM
890 V
P
Total power dissipation P
tot
250 mW
Package dissipation
ILD620 400 mW
ILD620GB 400 mW
Derate from 25 °C 5.33 mW/°C
Package dissipation
ILQ620 500 mW
ILQ620GB 500 mW
Derate from 25 °C 6.67 mW/°C
Creepage distance 7mm
Clearance distance 7mm
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Junction temperature T
j
100 °C
Soldering temperature
(1)
2 mm from case bottom T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= ± 10 mA V
F
1 1.15 1.3 V
Forward current V
R
= ± 0.7 V I
F
2.5 20 μA
Capacitance V
F
= 0 V, f = 1 MHz C
O
25 pF
Thermal resistance, junction to lead R
thJL
750 K/W
OUTPUT
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
6.8 pF
Collector emitter leakage current
V
CE
= 24 V I
CEO
10 100 nA
T
A
= 85 °C, V
CE
= 24 V I
CEO
250μA
Thermal resistance, junction to lead R
thJL
500 K/W
ILD620, ILD620GB, ILQ620, ILQ620GB
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 12-Apr-13
3
Document Number: 83653
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Note
• According to DIN EN 60747-5-5 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
COUPLER
Off-state collector current V
F
= ± 0.7 V, V
CE
= 24 V I
CEoff
110μA
Collector emitter saturation voltage
I
F
= ± 8 mA, I
CE
= 2.4 mA
ILD620 V
CEsat
0.4 V
ILQ620 V
CEsat
0.4 V
I
F
= ± 1 mA, I
CE
= 0.2 mA
ILD620GB V
CEsat
0.4 V
ILQ620GB V
CEsat
0.4 V
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Channel/channel CTR match I
F
= ± 5 mA, V
CE
= 5 V CTRX/CTRY 1 to 1 3 to 1
CTR symmetry I
CE
(I
F
= - 5 mA)/I
CE
(I
F
= + 5 mA) I
CE(RATIO)
0.5 2
Current transfer ratio
(collector emitter saturated)
I
F
= ± 1 mA, V
CE
= 0.4 V
ILD620 CTR
CEsat
60 %
ILQ620 CTR
CEsat
60 %
Current transfer ratio
(collector emitter)
I
F
= ± 5 mA, V
CE
= 5 V
ILD620 CTR
CE
50 80 600 %
ILQ620 CTR
CE
50 80 600 %
Current transfer ratio
(collector emitter saturated)
I
F
= ± 1 mA, V
CE
= 0.4 V
ILD620GB CTR
CEsat
30 %
ILQ620GB CTR
CEsat
30 %
Current transfer ratio
(collector emitter)
I
F
= ± 5 mA, V
CE
= 5 V
ILD620GB CTR
CEsat
100 200 600 %
ILQ620GB CTR
CEsat
100 200 600 %
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test
100 %, t
test
= 1 s V
pd
1.669 kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IOTM
10 kV
V
pd
1.424 kV
Insulation resistance
V
IO
= 500 V R
IO
10
12
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
V
IO
= 500 V, T
amb
150 °C
(construction test only)
R
IO
10
9
Forward current I
si
275 mA
Power dissipation P
SO
400 mW
Rated impulse voltage V
IOTM
10 kV
Safety temperature T
si
175 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
P1-P3P4-P6P7-P9

ILQ620-X001

Mfr. #:
Buy ILQ620-X001
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Quad CTR > 50%
Lifecycle:
New from this manufacturer.
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