SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – JANUARY 1996
FEATURES
* 60 Volt V
DS
*R
DS(on)
=5Ω
PARTMARKING DETAIL – MY
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
60 V
Continuous Drain Current at T
amb
= 25°C I
D
150 mA
Pulsed Drain Current I
DM
3A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
= 25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
60 V
I
D
=100µA, V
GS
=0V
Gate-Source
Breakdown Voltage
V
GS(th)
0.8 2.5 V I
D
=1mA, V
DS
= V
GS
Gate Body Leakage I
GSS
100 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage
Drain Current (1)
I
DSS
10
µA
V
DS
=60 V, V
GS
=0V
On State Drain
Current(1)
I
D(on)
750 mA V
DS
=15 V, V
GS
=10V
Static Drain Source On
State Resistance (1)
R
DS(on)
5.0
7.5
Ω
Ω
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=200mA
Forward
Transconductance
(1)(2)
g
fs
100 mS V
DS
=15V, I
D
=500mA
Input Capacitance (2) C
iss
60 pF
Common Source
Output Capacitance (2)
C
oss
25 pF V
DS
=25 V, V
GS
=0V
f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5pF
Turn-On Time (2)(3) t
(on)
310ns
V
DD
≈15V, I
D
=600mA
Turn-Off Time (2)(3) t
(off)
410ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
For typical characteristics graphs see ZVN3306F datasheet.
VN10LF
G
3 - 308
