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TSUS5402

P1-P3P4-P5
TSUS5400, TSUS5401, TSUS5402
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 24-Aug-11
1
Document Number: 81056
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Infrared Emitting Diode, 950 nm, GaAs
DESCRIPTION
TSUS5400 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue-gray tinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λ
p
= 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8390
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) ϕ (deg) λ
p
(nm) t
r
(ns)
TSUS5400 14 ± 22 950 800
TSUS5401 17 ± 22 950 800
TSUS5402 20 ± 22 950 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSUS5400 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSUS5401 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSUS5402 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
150 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
300 mA
Surge forward current t
p
= 100 μs I
FSM
2.5 A
Power dissipation P
V
170 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R
thJA
230 K/W
TSUS5400, TSUS5401, TSUS5402
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 24-Aug-11
2
Document Number: 81056
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21313
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21314
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 100 mA, t
p
= 20 ms V
F
1.3 1.7 V
Temperature coefficient of V
F
I
F
= 100 mA TK
VF
- 1.3 mV/K
Reverse current V
R
= 5 V I
R
100 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
30 pF
Temperature coefficient of φ
e
I
F
= 20 mA TKφ
e
- 0.8 %/K
Angle of half intensity ϕ ± 22 deg
Peak wavelength I
F
= 100 mA λ
p
950 nm
Spectral bandwidth I
F
= 100 mA Δλ 50 nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
0.2 nm/K
Rise time
I
F
= 100 mA t
r
800 ns
I
F
= 1.5 A t
r
400 ns
Fall time
I
F
= 100 mA t
f
800 ns
I
F
= 1.5 A t
f
400 ns
Virtual source diameter d2.9mm
TYPE DEDICATED CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 1.5 A, t
p
= 100 μs
TSUS5400 V
F
2.2 3.4 V
TSUS5401 V
F
2.2 3.4 V
TSUS5402 V
F
2.2 2.7 V
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms
TSUS5400 I
e
71435mW/sr
TSUS5401 I
e
10 17 35 mW/sr
TSUS5402 I
e
15 20 35 mW/sr
I
F
= 1.5 A, t
p
= 100 μs
TSUS5400 I
e
60 140 mW/sr
TSUS5401 I
e
85 160 mW/sr
TSUS5402 I
e
120 190 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms
TSUS5400 φ
e
13 mW
TSUS5401 φ
e
14 mW
TSUS5402 φ
e
15 mW
TSUS5400, TSUS5401, TSUS5402
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 24-Aug-11
3
Document Number: 81056
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Radiant Power vs. Forward Current
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
t
p
- Pulse Duration (ms)
94 7989
10
0
10
1
10
1
10
-1
10
-1
10
0
10
2
10
-2
I- Forward Current (A)
F
t
p
/T = 0.01
I
FSM
= 2.5 A ( Single Pulse )
0.05
0.1
0.5
1.0
94 7996
10
1
10
0
10
2
10
3
10
4
10
-1
I- Forward Current (mA)
F
43210
V
F
- Forward Voltage (V)
0.7
0.8
0.9
1.0
1.1
1.2
V
F rel
- Relative Forward Voltage (V)
94 7990
T
amb
- Ambient Temperature (°C)
100806040200
I
F
= 10 mA
I
F
- Forward Current (mA)
94 7997
10
3
10
1
10
2
10
4
10
0
1
10
100
1000
I - Radiant Intensity (mW/sr)
e
TSUS5400
TSUS 5401
TSUS 5402
- Radiant Power (mW)
e
I
F
- Forward Current (mA)
94 7998
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
TSUS5400
TSUS 5402
Φ
- 10 10 50 0 100
0
0.4
0.8
1.2
1.6
I
e rel
;
140
94 7993
I
F
= 20 mA
Φ
e rel
T
amb
- Ambient Temperature (°C)
P1-P3P4-P5

TSUS5402

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Description:
Infrared Emitters 22 Degree 210mW 950nm
Lifecycle:
New from this manufacturer.
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