TSM6968SD
20V Dual N-Channel MOSFET w/ESD Protected
Document Number:
DS_P0000131 1
Version: F15
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
● ESD Protect 2KV
Application
● Specially Designed for Li-on Battery Packs
● Battery Switch Application
Ordering Information
Part No. Package
Packing
TSM6968SDCA RVG TSSOP-8
3Kpcs / 13” Reel
Note: “G” denotes for Halogen Free
Absolute Maximum Rating
(Ta = 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain Current, V
@4.5V. I
6.5 A
Pulsed Drain Current, V
GS
@4.5V I
DM
30 A
Continuous Source Current (Diode Conduction)
a,b
I
1.4 A
Maximum Power Dissipation
Ta = 25°C
P
D
1.04
W
Ta = 75°C 0.625
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
, T
-55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Foot (Drain) Thermal Resistance RӨ
83 °C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
120 °C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
PRODUCT SUMMARY
V
(V) R
(mΩ) I
(A)
20
22 @ V
GS
= 4.5V 6.5
29 @ V
GS
= 2.5V 5.5
Dual N-Channel MOSFET
1. Drain 1 8. Drain 2
2. Source 1 7. Source 2
4. Gate 1 5. Gate 2