FOD8163S Datasheet FOD816300, FOD816SD, FOD816 | P1-P3

1

www.fairchildsemi.com

July 2005

FOD816 Series Rev. 1.0.3

FOD816 Series 4-Pin Phototransistor Optocouplers

FOD816 Series

4-Pin Phototransistor Optocouplers

Features

■

AC input response

■

Applicable to Pb-free IR reﬂow soldering

■

Compact 4-pin package

■

High current transfer ratio: 600% minimum

■

Safety agency approvals pending

■

High input-output isolation voltage of 5000Vrms

Applications

■

Power supply regulators

■

Digital logic inputs

■

Microprocessor inputs

Description

The FOD816 consists of two gallium arsenide infrared emitting

diodes, connected in inverse parallel, driving a silicon photodar-

lington output in a 4-pin dual in-line package.

Functional Block Diagram

Absolute Maximum Ratings

(T

A

= 25°C Unless otherwise speciﬁed.)

Parameter Symbol Value Units

TOTAL DEVICE

Storage Temperature T

STG

-55 to +125 °C

Operating Temperature T

OPR

-30 to +100 °C

Lead Solder Temperature T

SOL

260 for 10 sec °C

Total Power Dissipation P

TOT

200 mW

INPUT

Forward Current I

F

±50 mA

Power Dissipation P 70 mW

OUTPUT

Collector-Emitter Voltage V

CEO

35 V

Emitter-Collector Voltage V

ECO

6V

Collector Current I

C

80 mA

Collector Power Dissipation P

C

150 mW

1ANODE, CATHODE

2

4

3CATHODE, ANODE

COLLECTOR

EMITTER

4

1

2

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FOD816 Series Rev. 1.0.3

FOD816 Series 4-Pin Phototransistor Optocouplers

Electrical/Characteristics

(T

A

= 25°C Unless otherwise speciﬁed.)

Individual Component Characteristics

Transfer Characteristics

(T

A

= 25°C Unless otherwise speciﬁed.)

Isolation Characteristics

NOTES

1. Current Transfer Ratio (CTR) = I

C

/I

F

x 100%.

Parameter Test Conditions Symbol Min Typ Max Unit

INPUT

Forward Voltage (I

F

= ±20 mA) V

F

— 1.2 1.4 V

Te r minal Capacitance (V = 0, f = 1 kHz) C

t

—50250 pF

OUTPUT

Collector Dark Current (V

CE

= 10 V, I

F

= 0) I

CEO

—— 1µA

Collector-Emitter Breakdown Voltage (I

C

= 0.1 mA, I

F

= 0) BV

CEO

35 — — V

Emitter-Collector Breakdown Voltage (I

E

= 10 µA, I

F

= 0) BV

ECO

6——V

DC Characteristic Test Conditions Symbol Min Typ Max Unit

Collector Current

(I

F

= ±1 mA, V

CE

= 2 V)

I

C

6—75mA

Current Transfer Ratio

1

CTR 600 — 7,500 %

Collector-Emitter Saturation Voltage (I

F

= ±20 mA, I

C

= 5 mA) V

CE (sat)

— 0.8 1 V

Isolation Resistance (DC500V 40~60% R.H.) R

iso

5x10

10

1x10

11

—

Ω

Floating Capacitance (V = 0, f = 1 MHz) C

f

— 0.6 1 pF

Cut-Off Frequency (V

CE

= 5 V, I

C

= 2 mA, R

L

= 100

Ω

, -3dB) f

C

16—KHz

Response Time (Rise)

(V

CE

= 2 V, I

C

= 10 mA, R

L

= 100

Ω

t

r

—60300 µs

Response Time (Fall) t

f

—53250 µs

Characteristic Test Conditions Symbol Min Typ Max Units

Input-Output Isolation Voltage (note 3) f = 60Hz, t = 1 min V

ISO

5000 Vac(rms)

Isolation Resistance (V

I-O

= 500 VDC) R

ISO

5 x 10

10

11

Ω

Isolation Capacitance (V

I-O

= 0, f = 1 MHz) C

ISO

0.6 1.0 pf

3

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FOD816 Series Rev. 1.0.3

FOD816 Series 4-Pin Phototransistor Optocouplers

Typical Electrical/Optical Characteristic Curves

(T

A

= 25°C Unless otherwise speciﬁed.)

0

-30

0

Ta = 75°C

50°C

25°C

0°C

-25°C

V

CE

= 2V

Ta = 25°C

I

F

= 10 mA

Pc(MAX.)

5mA

2mA

1mA

Ic = 0.5mA

1mA

3mA

7mA

5mA

Ta = 25°C

30mA

50mA

7550250

100 125

10

20

30

40

50

60

0

50

100

150

200

0

1

2

3

4

5

6

7

8

1

2

5

10

20

50

100

200

500

0

0.1 0.2 0.5 21510

400

800

1200

1600

2000

012345

20

40

60

80

100

FORWARD CURRENT I

F

(mA)

Fig. 1 Forward Current

vs. Ambient Temperature

COLLECTOR POWER DISSIPATION P

C

(mW)

Fig. 2 Collector Power Dissipation

vs. Ambient Temperature

FORWARD CURRENT I

F

(mA)

COLLECTOR-EMITTER SATURATION

VOLTAGE V

CE

(sat) (V)

Fig. 3 Collector-Emitted Saturation Voltage

vs. Forward Current

Fig. 4 Forward Current vs. Forward Voltage

FORWARD VOLTAGE V

F

(V)

FORWARD CURRENT I

F

(mA)

FORWARD CURRENT I

F

(mA)

CURRENT TRANSFER RATIO CTR ( %)

Fig. 5 Current Transfer Ratio

vs. Forward Current

COLLECTOR-EMITTER VOLTAGE V

CE

(V)

COLLECTOR CURRENT I

C

(mA)

Fig. 6 Collector Current

vs. Collector-Emitter Voltage

AMBIENT TEMPERATURE T

A

(°C)

-30

7550250

100 125

AMBIENT TEMPERATURE T

A

(°C)

04.03.53.02.52.01.51.00.500.51.01.5 2.0 2.5 3.0

FOD8163S

FOD8163S

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