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GSOT03-HT3-GS08

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number 85822
Rev. 1.8, 21-Apr-08
GSOT03-HT3 to GSOT36-HT3
Vishay Semiconductors
For technical support, please contact: ESD-Protection@vishay.com
BiAs-Mode (1-line Bidirectional Asymmetrical protection mode)
With the GSOTxx-HT3 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1
connected to ground and pin 3 connected to a signal- or data-line which has to be protected. As long as the
voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse
Working Voltage (V
RWM
) the protection diode between pin 2 and pin 3 offer a high isolation to the ground line.
The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V
C
) is defined by the BReakthrough Voltage (V
BR
) level
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (V
F
) clamps the negative transient close to
the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx-HT3 clamping behaviour is
Bi
directional and Asymmetrical (BiAs).
Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified
GSOT03-HT3
BiAs mode (between pin 3 to 1)
20418
L1
1
2
3
Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 100 µA V
RWM
3.3 V
Reverse current
at V
R
= 3.3 V I
R
100 µA
Reverse break down voltage
at I
R
= 1 mA V
BR
44.6 V
Reverse clamping voltage
at I
PP
= 1 A V
C
5.7 7.5 V
at I
PP
= I
PPM
= 30 A V
C
10 12.3 V
Forward clamping voltage
at I
PP
= 1 A V
F
11.2V
at I
PP
= I
PPM
= 30 A V
F
4.5 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
420 600 pF
at V
R
= 1.6 V; f = 1 MHz C
D
260 pF
GSOT03-HT3 to GSOT36-HT3
Document Number 85822
Rev. 1.8, 21-Apr-08
Vishay Semiconductors
www.vishay.com
5
For technical support, please contact: ESD-Protection@vishay.com
GSOT04-HT3
BiAs mode (between pin 3 to 1)
GSOT05-HT3
BiAs mode (between pin 3 to 1)
GSOT08-HT3
BiAs mode (between pin 3 to 1)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 20 µA V
RWM
4V
Reverse current
at V
R
= 4 V I
R
20 µA
Reverse break down voltage
at I
R
= 1 mA V
BR
56.1 V
Reverse clamping voltage
at I
PP
= 1 A V
C
7.5 9 V
at I
PP
= I
PPM
= 30 A V
C
11.2 14.3 V
Forward clamping voltage
at I
PP
= 1 A V
F
11.2V
at I
PP
= I
PPM
= 30 A V
F
4.5 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
310 450 pF
at V
R
= 2 V; f = 1 MHz C
D
200 pF
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 10 µA V
RWM
5V
Reverse current
at V
R
= 5 V I
R
10 µA
Reverse break down voltage
at I
R
= 1 mA V
BR
66.8 V
Reverse clamping voltage
at I
PP
= 1 A V
C
78.7V
at I
PP
= I
PPM
= 30 A V
C
12 16 V
Forward clamping voltage
at I
PP
= 1 A V
F
11.2V
at I
PP
= I
PPM
= 30 A V
F
4.5 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
260 350 pF
at V
R
= 2.5 V; f = 1 MHz C
D
150 pF
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 5 µA V
RWM
8V
Reverse current
at V
R
= 8 V I
R
5µA
Reverse break down voltage
at I
R
= 1 mA V
BR
910 V
Reverse clamping voltage
at I
PP
= 1 A V
C
10.7 13 V
at I
PP
= I
PPM
= 18 A V
C
15.2 19.2 V
Forward clamping voltage
at I
PP
= 1 A V
F
11.2V
at I
PP
= I
PPM
= 18 A V
F
3V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
160 250 pF
at V
R
= 4 V; f = 1 MHz C
D
80 pF
www.vishay.com
6
Document Number 85822
Rev. 1.8, 21-Apr-08
GSOT03-HT3 to GSOT36-HT3
Vishay Semiconductors
For technical support, please contact: ESD-Protection@vishay.com
GSOT12-HT3
BiAs mode (between pin 3 to 1)
GSOT15-HT3
BiAs mode (between pin 3 to 1)
GSOT24-HT3
BiAs mode (between pin 3 to 1)
Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 1 µA V
RWM
12 V
Reverse current
at V
R
= 12 V I
R
1µA
Reverse break down voltage
at I
R
= 1 mA V
BR
13.5 15 V
Reverse clamping voltage
at I
PP
= 1 A V
C
15.4 18.7 V
at I
PP
= I
PPM
= 12 A V
C
21.2 26 V
Forward clamping voltage
at I
PP
= 1 A V
F
11.2V
at I
PP
= I
PPM
= 12 A V
F
2.2 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
115 150 pF
at V
R
= 6 V; f = 1 MHz C
D
50 pF
Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 1 µA V
RWM
15 V
Reverse current
at V
R
= 15 V I
R
1µA
Reverse break down voltage
at I
R
= 1 mA V
BR
16.5 18 V
Reverse clamping voltage
at I
PP
= 1 A V
C
19.4 23.5 V
at I
PP
= I
PPM
= 8 A V
C
24.8 28.8 V
Forward clamping voltage
at I
PP
= 1 A V
F
11.2V
at I
PP
= I
PPM
= 8 A V
F
1.8 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
90 120 pF
at V
R
= 7.5 V; f = 1 MHz C
D
35 pF
Parameter Test conditions/remarks Symbol Min. Typ. Max. Unit
Protection paths Number of lines which can be protected
N
lines
1 lines
Reverse stand off voltage
at I
R
= 1 µA V
RWM
24 V
Reverse current
at V
R
= 24 V I
R
1µA
Reverse break down voltage
at I
R
= 1 mA V
BR
27 30 V
Reverse clamping voltage
at I
PP
= 1 A V
C
34 41 V
at I
PP
= I
PPM
= 5 A V
C
41 47 V
Forward clamping voltage
at I
PP
= 1 A V
F
11.2V
at I
PP
= I
PPM
= 5 A V
F
1.4 V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
65 80 pF
at V
R
= 12 V; f = 1 MHz C
D
20 pF
P1-P3P4-P6P7-P9

GSOT03-HT3-GS08

Mfr. #:
Buy GSOT03-HT3-GS08
Manufacturer:
Vishay
Description:
TVS DIODE 3.3V 12.3V LLP75-3B
Lifecycle:
New from this manufacturer.
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