OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DMC2004VK-7

P1-P3P4-P6P7-P8
DMC2004VK
Document number: DS30925 Rev. 6 - 2
1 of 8
www.diodes.com
January 2013
© Diodes Incorporated
DMC2004VK
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage V
GS(th)
<1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Ultra-Small Surface Mount Package
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• ESD Protected Gate
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMC2004VK-7 SOT-563 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012
Code U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
e3
SOT-563
TOP VIEW
Internal Schematic
TOP VIEW
BOTTOM VIEW
ESD protected
S
2
D
2
Q
1
Q
2
D
1
S
1
G
2
G
1
CAB = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
Green
DMC2004VK
Document number: DS30925 Rev. 6 - 2
2 of 8
www.diodes.com
January 2013
© Diodes Incorporated
DMC2004VK
Maximum Ratings N-CHANNEL – Q
1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8
V
Drain Current (Note 5)
T
A
= +25°C
T
A
= +85°C
I
D
670
480
mA
Maximum Ratings P-CHANNEL – Q
2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8
V
Drain Current (Note 5)
T
A
= +25°C
T
A
= +85°C
I
D
-530
-380
mA
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
0.45 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θ
JA
281 °C/W
t<10s 210 °C/W
Total Power Dissipation (Note 6)
P
D
1 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θ
JA
129 °C/W
t<10s 97 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics N-CHANNEL – Q
1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20
⎯ ⎯
V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
1.0 µA
V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
± 1.0
µA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
0.5
⎯
1.0 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
⎯
0.4
0.5
0.7
0.55
0.70
0.90
Ω
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance (Note 8)
|Y
fs
|
200
⎯ ⎯
mS
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage
V
SD
0.5
⎯
1.2 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ ⎯
150 pF
V
DS
= 16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯ ⎯
25 pF
Reverse Transfer Capacitance
C
rss
⎯ ⎯
20 pF
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMC2004VK
Document number: DS30925 Rev. 6 - 2
3 of 8
www.diodes.com
January 2013
© Diodes Incorporated
DMC2004VK
Electrical Characteristics P-CHANNEL – Q
2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20
⎯ ⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
-1.0 µA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
± 1.0
µA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
-0.5
⎯
-1.0 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
0.7
1.1
1.7
0.9
1.4
2.0
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance
|Y
fs
|
200
⎯ ⎯
mS
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage
V
SD
-0.5
⎯
-1.2 V
V
GS
= 0V, I
S
= -115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯ ⎯
175 pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯ ⎯
30 pF
Reverse Transfer Capacitance
C
rss
⎯ ⎯
20 pF
Q
1
, N-CHANNEL
0
0
V , DRAIN SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
E
S
H
O
LD V
O
L
T
A
G
E
(V)
GS(th)
I , DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
D
P1-P3P4-P6P7-P8

DMC2004VK-7

Mfr. #:
Buy DMC2004VK-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 400mW 20V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet