JANS2N5666U3

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
T4-LDS-0062 Rev. 1 (081095) Page 1 of 3
DEVICES LEVELS
2N5664 2N5666 2N5667 JAN
2N5665 2N5666S 2N5667S JANTX
2N5666U3 JANTV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol
2N5664
2N5666, S
2N5665
2N5667, S
Unit
Collector-Emitter Voltage V
CEO
200 300 Vdc
Collector-Base Voltage V
CBO
250 400 Vdc
Emitter-Base Voltage V
EBO
6.0 Vdc
Base Current I
B
1.0 Adc
Collector Current I
C
5.0 Adc
2N5664
2N5665
2N5666, S
2N5667, S
2N5666U3
Total 1/
Power Dissipation
@ T
A
= +25°C
@ T
C
= +100°C
P
T
2.5
30
1.2
15
1.5
35
W
Operating & Storage Junction
Temperature Range
T
J
, T
stg
-65 to +200 °C
Note: 1) Consult 19500/455 for thermal derating curves.
ELECTRICAL CHARACTERISTICS (T
C
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc 2N5664, 2N5666
2N5665, 2N5667
V
(BR)CER
250
400
Vdc
Emitter-Base Breakdown Voltage
I
E
= 10μAdc
V
(BR)EBO
6.0
Vdc
Collector-Emitter Cutoff Current
V
CE
= 200Vdc
V
CE
= 300Vdc
2N5664, 2N5666
2N5665, 2N5667
I
CES
0.2
0.2
μAdc
Collector-Base Cutoff Current
V
CB
= 200Vdc
V
CB
= 250Vdc
2N5664, 2N5666
0.1
1.0
μAdc
mAdc
V
CB
= 300Vdc
V
CB
= 400Vdc
2N5665, 2N5667
I
CBO
0.1
1.0
μAdc
mAdc
TO-66 (TO-213AA)
2N5664, 2N5665
TO-5
2N5666, 2N5667
TO-39 (TO-205AD)
2N5666S, 2N5667S
U-3
2N5666U3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
T4-LDS-0062 Rev. 1 (081095) Page 2 of 3
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERTICS
Forward-Current Transfer Ratio
I
C
= 0.5Adc, V
CE
= 2.0Vdc 2N5664, 2N5666
2N5665, 2N5667
40
25
I
C
= 1.0Adc, V
CE
= 5.0Vdc 2N5664, 2N5666
2N5665, 2N5667
40
25
120
75
I
C
= 3.0Adc, V
CE
= 5.0Vdc 2N5664, 2N5666
2N5665, 2N5667
15
10
I
C
= 5.0Adc, V
CE
= 5.0Vdc All Types
h
FE
5.0
Collector-Emitter Saturation Voltage
I
C
= 3.0Adc, I
B
= 0.3Adc 2N5664, 2N5666 0.4
I
C
= 3.0Adc, I
B
= 0.6Adc 2N5665, 2N5667
0.4
I
C
= 5.0Adc, I
B
= 1.0Adc All Types
V
CE(sat)
1.0
Vdc
Base-Emitter Saturation Voltage
I
C
= 3.0Adc, I
B
= 0.3Adc 2N5664, 2N5666 1.2
I
C
= 3.0Adc, I
B
= 0.6Adc 2N5665, 2N5667
1.2
I
C
= 5.0Adc, I
B
= 1.0Adc All Types
V
BE(sat)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 0.5Adc, V
CE
= 5.0Vdc, f = 10MHz
|h
fe
|
2.0 7.0
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz f 1.0MHz
C
obo
120
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
V
CC
= 100Vdc; I
C
= 1.0Adc; I
B1
= 30mAdc
t
on
0.25
μs
Turn-Off Time
V
CC
= 100Vdc; I
C
= 1.0Adc; I
B1
= -I
B2
= 50mAdc 2N5664, 2N5666
2N5665, 2N5667
t
off
1.5
2.0
μs
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
T4-LDS-0062 Rev. 1 (081095) Page 3 of 3
SAFE OPERATING AREA
DC Tests
T
C
= 100°C, 1 Cycle, t 1.0s, t
r
+ t
f
= 10μs
Test 1
V
CE
= 6.0Vdc, I
C
= 5.0Adc
V
CE
= 3.0Vdc, I
C
= 5.0Adc
2N5664 , 2N5665
2N5666, 2N5667
Test 2
V
CE
= 32Vdc, I
C
= 0.75Adc
V
CE
= 40Vdc, I
C
= 0.75Adc
V
CE
= 29Vdc, I
C
= 0.4Adc
V
CE
= 37.5Vdc, I
C
= 0.4Adc
2N5664
2N5665
2N5666
2N5667
Test 3
V
CE
= 200Vdc, I
C
= 29mAdc
V
CE
= 200Vdc, I
C
= 19mAdc
V
CE
= 300Vdc, I
C
= 21mAdc
V
CE
= 300Vdc, I
C
= 14mAdc
2N5664
2N5666
2N5665
2N5667
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%

JANS2N5666U3

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Bipolar Transistors - BJT Power BJT
Lifecycle:
New from this manufacturer.
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