TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
T4-LDS-0062 Rev. 1 (081095) Page 1 of 3
DEVICES LEVELS
2N5664 2N5666 2N5667 JAN
2N5665 2N5666S 2N5667S JANTX
2N5666U3 JANTV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol
2N5664
2N5666, S
2N5665
2N5667, S
Unit
Collector-Emitter Voltage V
CEO
200 300 Vdc
Collector-Base Voltage V
CBO
250 400 Vdc
Emitter-Base Voltage V
EBO
6.0 Vdc
Base Current I
B
1.0 Adc
Collector Current I
C
5.0 Adc
2N5664
2N5665
2N5666, S
2N5667, S
2N5666U3
Total 1/
Power Dissipation
@ T
A
= +25°C
@ T
C
= +100°C
P
T
2.5
30
1.2
15
1.5
35
W
Operating & Storage Junction
Temperature Range
T
J
, T
stg
-65 to +200 °C
Note: 1) Consult 19500/455 for thermal derating curves.
ELECTRICAL CHARACTERISTICS (T
C
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc 2N5664, 2N5666
2N5665, 2N5667
V
(BR)CER
250
400
Vdc
Emitter-Base Breakdown Voltage
I
E
= 10μAdc
V
(BR)EBO
6.0
Vdc
Collector-Emitter Cutoff Current
V
CE
= 200Vdc
V
CE
= 300Vdc
2N5664, 2N5666
2N5665, 2N5667
I
CES
0.2
0.2
μAdc
Collector-Base Cutoff Current
V
CB
= 200Vdc
V
CB
= 250Vdc
2N5664, 2N5666
0.1
1.0
μAdc
mAdc
V
CB
= 300Vdc
V
CB
= 400Vdc
2N5665, 2N5667
I
CBO
0.1
1.0
μAdc
mAdc
TO-66 (TO-213AA)
2N5664, 2N5665
TO-5
2N5666, 2N5667
TO-39 (TO-205AD)
2N5666S, 2N5667S
U-3
2N5666U3