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STTH1602CR

P1-P3P4-P6P7-P7
1/7
STTH1602C
February 2004 - Ed: 1
HIGH EFFICIENCY ULTRAFAST DIODE
®
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged in TO-220AB, D
2
PAK, TO-220FPAB
and I
2
PAK, this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
DESCRIPTION
■
Suited for SMPS
■
Low losses
■
Low forward and reverse recovery times
■
Low leakage current
■
High junction temperature
■
Insulated package: TO-220FPAB
FEATURES AND BENEFITS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
200 V
I
F(RMS)
RMS forward current
30 A
I
F(AV)
Average forward
current δ =0.5
TO-220AB / I
2
PAK /
D
2
PAK
Tc = 150°C Per diode
8A
Tc = 140°C Per device
16
Tc = 140°C Per diode
10
Tc = 130°C Per device
20
TO-220FPAB Tc = 130°C Per diode
8
Tc = 100°C Per device
16
Tc = 110°C Per diode
10
Tc = 75°C Per device
20
I
FSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
80 A
T
stg
Storage temperature range
- 65 + 175 °C
Tj
Maximum operating junction temperature
175 °C
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
Up to 2 x 10A
V
RRM
200 V
Tj (max) 175 °C
V
F
(typ) 0.78 V
t
rr
(typ) 21 ns
MAIN PRODUCT CHARACTERISTICS
A1
A2
K
I
2
PAK
STTH1602CR
A1
A2
K
TO-220AB
STTH1602CT
A1
A2
K
A1
A2
K
K
D
2
PAK
STTH1602CG
A1
A2
K
TO-220FPAB
STTH1602CFP
STTH1602C
2/7
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
*
Reverse leakage
current
Tj = 25°C V
R
=V
RRM
6µA
Tj = 125°C
460
V
F
**
Forward voltage drop Tj = 25°C I
F
=8A
1.1 V
Tj = 25°C I
F
=16A
1.25
Tj = 150°C I
F
=8A
0.78 0.89
Tj = 150°C I
F
=16A
1.05
Pulse test: * tp = 5ms, δ <2%
** tp = 380µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P = 0.73 x I
F(AV)
+ 0.020 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
Reverse
recovery time
Tj = 25°C I
F
=1A V
R
= 30V
dI
F
/dt = 100 A/µs
21 26 ns
I
RM
Reverse
recovery current
Tj = 125°C I
F
=8A V
R
= 160V
dI
F
/dt = 200 A/µs
6.8 8.8 A
t
fr
Forward
recovery time
Tj = 25°C I
F
=8A dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
F
max
160 ns
V
FP
Forward
recovery voltage
Tj = 25°C I
F
=8A dI
F
/dt = 100 A/µs
2.4 V
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Maximum Unit
R
th (j-c)
Junction to case TO-220AB / I
2
PAK / D
2
PAK Per diode
3.0 °C/W
Per device
1.9
TO-220FPAB Per diode
5.5
Per device
4.5
R
th (j-c)
Coupling TO-220AB / I
2
PAK / D
2
PAK
0.8 °C/W
TO-220FPAB
3.5
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode1) = P(diode1) x R
th(j-c)
(per diode) + P(diode2) x R
th(c)
THERMAL PARAMETERS
STTH1602C
3/7
0
10
20
30
40
50
60
70
80
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I (A)
M
T
δ
=tp/T
tp
I
M
P = 15W
P = 8W
P = 3W
δ
Fig. 1: Peak current versus duty cycle (per diode).
0
10
20
30
40
50
60
70
80
90
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V (V)
FM
I (A)
FM
T =25°C
j
T =150°C
j
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Z/R
th(j-c) th(j-c)
Single pulse
t(s)
p
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
D
2
PAK, I
2
PAK).
10
100
0 50 100 150 200
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0
10
20
30
40
50
60
70
80
90
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
I (A)
FM
V (V)
FM
T =25°C
j
T =150°C
j
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
0.0
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z/R
th(j-c) th(j-c)
Single pulse
t(s)
p
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAB).
P1-P3P4-P6P7-P7

STTH1602CR

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Manufacturer:
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Description:
Rectifiers 2x10 Amp 200 Volt
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