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SI2334DS-T1-GE3

P1-P3P4-P6P7-P9P10-P10
www.vishay.com
4
Document Number: 66802
S10-1533-Rev. A, 19-Jul-10
Vishay Siliconix
Si2334DS
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0 0.3 0.6 0.9 1.2
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.020
0.035
0.050
0.065
0.080
02468
I
D
=4.2A
T
J
=25 °C
T
J
= 125 °C
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
0
6
12
18
24
0.001 0.01 0.1 1 10 100
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
1s,10s
Limited by R
DS(on)
*
BVDSS Limited
1ms
100 μs
10 ms
DC
100 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
Document Number: 66802
S10-1533-Rev. A, 19-Jul-10
www.vishay.com
5
Vishay Siliconix
Si2334DS
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1.5
3.0
4.5
6.0
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power, Junction-to-Foot
0
0.5
1.0
1.5
2.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0
0.2
0.4
0.6
0.8
1.0
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 66802
S10-1533-Rev. A, 19-Jul-10
Vishay Siliconix
Si2334DS
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66802
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=166 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Foot
1
0.1
0.01
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
110
-1
10
-4
0.02
Single Pulse
0.1
0.2
0.05
P1-P3P4-P6P7-P9P10-P10

SI2334DS-T1-GE3

Mfr. #:
Buy SI2334DS-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI2336DS-T1-GE3
Lifecycle:
New from this manufacturer.
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