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HMC-ALH244

P1-P3P4-P6
LOW NOISE AMPLIFIERS - CHIP
1
1 - 132
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 40 GHz
v02.0209
General Description
Features
Functional Diagram
Noise Figure: 3.5 dB
Gain: 12 dB
P1dB Output Power: +13 dBm
Supply Voltage: +4V @ 45 mA
Die Size: 2.50 x 1.4 x 0.1 mm
Electrical Speci cations
[1]
, T
A
= +25° C, Vdd= 4V, Idd = 45mA
[2]
Typical Applications
This HMC-ALH244 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• SATCOM
The HMC-ALH244 is a two stage GaAs MMIC HEMT
Low Noise Ampli er die which operates between
24 and 40 GHz. The ampli er provides 12 dB of gain,
a noise  gure of 3.5 dB, and requires only 45 mA
from a +4V supply voltage. The HMC-ALH244 ampli er
die is ideal for integration into Multi-Chip-Modules
(MCMs) due to its small size (3.5 mm).
HMC-ALH244
Parameter Min. Typ. Max. Units
Frequency Range 24 - 40 GHz
Gain 10 12 dB
Noise Figure 3.5 4 dB
Input Return Loss 15 dB
Output Return Loss 17 dB
Output Power for 1 dB Compression 13 dBm
Supply Current (Idd) 45 100 mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (-0.2V Typ.) to achieve Idd
total
= 45 mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
1
1 - 133
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH244
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 40 GHz
Noise Figure vs. Frequency
Output Return Loss vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
0
2
4
6
8
10
12
14
16
20 25 30 35 40 45
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
20 25 30 35 40 45
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
20 25 30 35 40 45
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
20 25 30 35 40 45
NOISE FIGURE (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
1
1 - 134
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH244
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 40 GHz
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage +5.5 Vdc
Gate Bias Voltage -1 to +0.3 Vdc
RF Input Power 6 dBm
Channel Temperature 180 °C
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE
±
.002”
Die Packaging Information
[1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
P1-P3P4-P6

HMC-ALH244

Mfr. #:
Buy HMC-ALH244
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier GaAs HEMT WBand lo Noise amp, 24-40 GHz
Lifecycle:
New from this manufacturer.
Delivery:
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