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VS-6EWH06FNTRL-M3

P1-P3P4-P6P7-P8
VS-6EWH06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-Oct-16
4
Document Number: 93514
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
8642
10
0
150
170
180
110
130
140
160
120
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
DC
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
63
9
0
10
14
0
4
6
12
8
2
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
t
rr
(ns)
dI
F
/dt (A/µs)
100 1000
10
40
25
35
20
15
35
6 A, T
J
= 25 °C
6 A, T
J
= 125 °C
Q
rr
(nC)
dI
F
/dt (A/µs)
100 1000
0
200
80
120
160
180
40
60
100
140
20
6 A, T
J
= 25 °C
6 A, T
J
= 125 °C
VS-6EWH06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-Oct-16
5
Document Number: 93514
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-6EWH06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-Oct-16
6
Document Number: 93514
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-6EWH06FN-M3 75 3000 Antistatic plastic tube
VS-6EWH06FNTR-M3 2000 2000 13" diameter reel
VS-6EWH06FNTRL-M3 3000 3000 13" diameter reel
VS-6EWH06FNTRR-M3 3000 3000 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95627
Part marking information www.vishay.com/doc?95176
Packaging information www.vishay.com/doc?95033
SPICE model www.vishay.com/doc?95187
2 - Current rating (6 = 6 A)
4
- Package identifier:
W = D-PAK
E = single diode
5
- H = hyperfast recovery
6
- Voltage rating (06 = 600 V)
7
- FN = TO-252AA
8
-
TR = tape and reel
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
3 - Circuit configuration:
1 - Vishay Semiconductors product
- Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
9
Device code
51 32 4 6 7 8 9
VS- 6 E W H 06 FN TRL -M3
P1-P3P4-P6P7-P8

VS-6EWH06FNTRL-M3

Mfr. #:
Buy VS-6EWH06FNTRL-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers Freds - D-PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
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