Table 13: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revision D)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
1179 1089 999 mA
Operating current 1: One bank ACTIVATE-to-
READ-to-PRECHARGE
I
DD1
1
1269 1224 1179 mA
Precharge power-down current: Slow exit I
DD2P0
2
432 432 432 mA
Precharge power-down current: Fast exit I
DD2P1
2
1260 1080 900 mA
Precharge quiet standby current I
DD2Q
2
1440 1260 1080 mA
Precharge standby current I
DD2N
2
1512 1332 1152 mA
Precharge standby ODT current I
DD2NT
2
774 729 684 mA
Active power-down current I
DD3P
2
1440 1260 1080 mA
Active standby current I
DD3N
2
1620 1440 1260 mA
Burst read operating current I
DD4R
1
1944 1764 1584 mA
Burst write operating current I
DD4W
1
1989 1809 1629 mA
Refresh current I
DD5B
2
2259 2124 2034 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
432 432 432 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
2
540 540 540 mA
All banks interleaved read current I
DD7
1
4239 3789 3339 mA
Reset current I
DD8
2
504 504 504 mA
Notes:
1. One module rank in the active I
DD
, the other ranks in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
4GB, 8GB (x72, ECC, QR) 240-Pin Halogen-Free DDR3 RDIMM
I
DD
Specifications
PDF: 09005aef83950b83
js-z-f36c512_1gx72pdz.pdf – Rev. B 1/11 EN
17
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© 2009 Micron Technology, Inc. All rights reserved.
