1/8May 2001
IRFP460
N-CHANNEL 500V - 0.22Ω - 18.4A TO-247
PowerMesh™II MOSFET
■ TYPICAL R
DS
(on) = 0.22Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
™II is the evolution of the first
generation of MESH OVERLAY
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ SWITH MODE LOW POWER SUPPLIES
(SMPS)
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
IRFP460 500V < 0.27
Ω
18.4A
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500 V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
Ω
)
500 V
V
GS
Gate- source Voltage ±30 V
I
D
Drain Current (continuos) at T
C
= 25°C
18.4 A
I
D
Drain Current (continuos) at T
C
= 100°C
11.6 A
I
DM
(●)
Drain Current (pulsed) 73.6 A
P
TOT
Total Dissipation at T
C
= 25°C
220 W
Derating Factor 1.75 W/°C
dv/dt(1) Peak Diode Recovery voltage slope 3.5 V/ns
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
(1)I
SD
≤
18.4A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
