CURB201-G

SMD Ultra Fast Recovery Rectifiers
Reverse Voltage: 50 to 1000 Volts
Forward Current: 2.0 Amp
RoHS Device
Page 1
REV:A
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Fast recovery time: 50~75nS.
-Low leakage current.
Mechanical data
-Case: JEDEC DO-214AA, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.093 grams
CURB201-G Thru. CURB207-G
Maximum Ratings and Electrical Characteristics
Dimensions in inches and (millimeter)
DO-214AA (SMB)
QW-BU003
CURB
201-G
2
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm square (0.13mm thick) land area.
Comchip Technology CO., LTD.
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
Max. average forward current
Max. instantaneous forward at
2.0A
Reverse recovery time
O
Max. DC reverse current at TA=25 C
O
rated DC blocking voltage TA=125 C
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
voltage
CURB
202-G
CURB
203-G
CURB
204-G
CURB
205-G
UnitsSymbolParameter
VRRM
VDC
VRMS
IFSM
IO
VF
Trr
IR
RθJL
TJ
TSTG
50
50
35
100
100
70
1.0
200
200
140
400
400
280
50
2.0
1.3
5.0
100
20
150
-55 to +150
600
600
420
V
V
V
A
A
V
nS
μA
O
C/W
O
C
O
C
CURB
206-G
CURB
207-G
800
800
560
1.7
75
1000
1000
700
50
0.155(3.94)
0.130(3.30)
0.083(2.11)
0.075(1.91)
0.220(5.59)
0.200(5.08)
0.012(0.31)
0.006(0.15)
0.008(0.20)
0.004(0.10)
0.050(1.27)
0.030(0.76)
0.096(2.44)
0.083(2.13)
0.185(4.70)
0.160(4.06)
QW-BU003
RATING AND CHARACTERISTIC CURVES (CURB201-G thru CURB207-G)
Percent of Rated Peak Reverse Voltage (%)
120100600
Fig.1 Reverse Characteristics
0.1
1
10
100
1000
R
ever e u
rr
n
(μ
)
s C e
t
A
Forward Voltage (V)
0
Fig.2 Forward Characteristics
0.001
o w rd C
rren (A)
F r a
u
t
0.01
0.1
1
10
0.8
Reverse Voltage (V)
0.1
Fig.3 Junction Capacitance
1
J
n ti n apacian
ce(p )
u c o C
t F
10
100
200
1 10 100
Number of Cycles at 60Hz
Fig.4 Non-repetitive Forward Surge Current
0
P
eak F
or
w
a
rd
S
urge C
ur
re
nt A
)
(
30
40
60
Comchip Technology CO., LTD.
Page 2
REV:A
0.4
1.2
1.81.4
1 10 100
10
50
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
(+)
25Vdc
(approx.)
(-)
D.U.T.
1Ω
NON-
INDUCTIVE
OSCILLLISCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
(+)
(-)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
trr
Set time base for
50 / 10nS / cm
1cm
-1.0A
-0.25A
0
+0.5A
Fig.6 Current Derating Curve
O
Ambient Temperature ( C)
Average Forward Current (A)
0 5025 75 100 150125 175
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Single phase
Half wave 60Hz
SMD Ultra Fast Recovery Rectifiers
80 140
20
O
TJ=25 C
8.3ms single half sine
wave, JEDEC method
20 40
O
TJ=125 C
O
TJ=25 C
0.2 0.6
1.0
1.6
O
TJ=25 C
Pulse width 300μS
4% duty cycle
CURB201-G~203-G
CURB204-G
CURB205-G~207-G
O
TJ=25 C
f=1MHz
Vsig=50mVp-p

CURB201-G

Mfr. #:
Manufacturer:
Comchip Technology
Description:
Rectifiers VR=50V, IO=2A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union