Preliminary Data Sheet No. PD60083
I
Features
••
••
• Output Power MOSFETs in half-bridge configuration
••
••
• High side gate drive designed for bootstrap operation
••
••
• Bootstrap diode integrated into package (HD type)
••
••
• Accurate timing control for both Power MOSFETs
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
••
••
• Internal oscillator with programmable frequency
SELF-OSCILLATING HALF BRIDGE
••
••
• 15.6V Zener clamped Vcc for offline operation
••
••
• Half-bridge output is out of phase with R
T
••
••
• Micropower startup
Description
The IR51H(D)XXX are complete high voltage, high speed, self-
oscillating half-bridge circuits. Proprietary HVIC and latch im-
mune CMOS technologies, along with the HEXFET
®
power
MOSFET technology, enable ruggedized single package construc-
tion. The front-end features a programmable oscillator which func-
tions similar to the CMOS 555 timer. The supply to the control
circuit has a zener clamp to simplify offline operation. The output
features two HEXFETs in a half-bridge configuration with an in-
ternally set deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and low side
V
IN
(max)
250V (IR51H(D)224)
400V (IR51H(D)310)
500V (IR51H(D)420)
Duty Cycle 50%
Deadtime 1.2µs
R
ds(on)
1.1W (IR51H(D)224)
3.0W (IR51H(D)310)
3.6W (IR51H(D)420)
P
D
(T
A
= 25
o
C
) 2.0W
Package
Typical Connection
Product Summary
f =
+
1
14 R 75 C
TT
. × ( ) × Ω
1
D1
2
3
4
6
7
9
Vcc
COM
VO
V
IN
V
B
IR51H(D)XXX
VIN
COM
TO,
LOAD
DC Bus
R
T
C
T
R
T
C
T
External
Fast recovery diode D1 is
not required for HD type
IR51H(D)224
IR51H(D)320
IR51H(D)420
power MOSFETs are matched to simplify
use in 50% duty cycle applications. The
device can operate up to 500 volts.