Data Sheet PN10202EJ04V0DS
4
PS2841-4A,PS2841-4B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 1 mA 0.9 1.1 1.2 V
Reverse Current IR VR = 5 V 10
µ
A
Terminal Capacitance Ct V = 0 V, f = 1 MHz 15 pF
Transistor Collector to Emitter Current ICEO IF = 0 mA, VCE = 24 V 100 nA
Coupled Current Transfer Ratio (IC/IF) CTR IF = 1 mA, VCE = 0.4 V 100 200 400 %
Optical Leakage Current
*1
(1 to 2-ch, 2 to 3-ch, 3 to 4-ch)
IL IF = 5 mA, VCE = 24 V 100 nA
Collector Saturation Voltage VCE (sat) IF = 1 mA, IC = 0.2 mA 0.13 0.3 V
Isolation Resistance RI-O VI-O = 1 kVDC 10
11
Ω
Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF
Turn-on Time
*2
ton VCC = 5 V, IF = 1 mA, RL = 5 kΩ 20
µ
s
Turn-off Time
*2
toff 110
*1 The optically induced leakage current is current which can be measured at transistor if LED = ”ON” and LED =
”OFF”.
LED of channel 1 is switched to ”ON”.
At Tr-output of channel 2 a voltage is applied and one can measure a current between emitter and collector.
This is leakage current (at I
F = 5 mA, VCEO = 24 V).
Measurement circuits for optical leakage current
E.g. : In the case of 1 to 2-ch (PS2841-4A)
5
3
2
4
6
1
8
10
11
9
7
12
A
I
F
I
L
*2 Test circuit for switching time
VCC
VOUT
IF
Pulse Input
RL = 5 kΩ
50 Ω
PW = 100 s
Duty cycle = 1/10
µ
In monitor
