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NSVDAN222T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 7
1 Publication Order Number:
DAN222/D
DAN222, NSVDAN222
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT−416/SC−75 package which is designed
for low power surface mount applications, where board space is at a
premium.
Features
• Fast t
rr
• Low C
D
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Value Unit
Reverse Voltage V
R
80 Vdc
Peak Reverse Voltage V
RM
80 Vdc
Forward Current I
F
100 mAdc
Peak Forward Current I
FM
300 mAdc
Peak Forward Surge Current (Note 1) I
FSM
2.0 Adc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation P
D
150 mW
Junction Temperature T
J
150 °C/W
Storage Temperature Range T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 mS
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
SC−75/SOT−416
CASE 463
STYLE 3
CATHODE
3
12
ANODE
1
DAN222T1G 3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
N9 M G
G
N9 = Specific Device Code
M = Date Code*
G = Pb−Free Package
1
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
DAN222G SC−75
(Pb−Free)
3000 / Tape & Reel
SC−75
(Pb−Free)
NSVDAN222T1G 3000 / Tape & Reel
SC−75
(Pb−Free)
DAN222, NSVDAN222
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristic
Symbol Condition Min Max Unit
Reverse Voltage Leakage Current I
R
V
R
= 70 V − 0.1
mAdc
Forward Voltage V
F
I
F
= 100 mA − 1.2 Vdc
Reverse Breakdown Voltage V
R
I
R
= 100 mA
80 − Vdc
Diode Capacitance C
D
V
R
= 6.0 V, f = 1.0 MHz − 3.5 pF
Reverse Recovery Time t
rr
(Note 2)
I
F
= 5.0 mA, V
R
= 6.0 V, R
L
= 100 W, I
rr
= 0.1 I
R
− 4.0 ns
2. t
rr
Test Circuit on following page.
TYPICAL ELECTRICAL CHARACTERISTICS
100
0.2 0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
0.1
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40
50
I
F
, FORWARD CURRENT (mA)
Figure 1. Forward Voltage Figure 2. Reverse Current
Figure 3. Diode Capacitance
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
I
R
, REVERSE CURRENT (μA)
T
A
= 85°C
T
A
= -40°C
T
A
= 25°C
1.0
0
0.9
0.8
0.7
0.6
2468
V
R
, REVERSE VOLTAGE (VOLTS)
C
D
, DIODE CAPACITANCE (pF)
DAN222, NSVDAN222
http://onsemi.com
3
A
R
L
t
r
t
p
t
10%
90%
V
R
t
p
= 2 ms
t
r
= 0.35 ns
I
F
t
rr
t
I
rr
= 0.1 I
R
I
F
= 5.0 mA
V
R
= 6 V
R
L
= 100 W
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE OUTPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit for the DAN222
P1-P3P4-P4

NSVDAN222T1G

Mfr. #:
Buy NSVDAN222T1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching SS SC75 SWCH DIO 80V TR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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